Preparation and Electrical Properties of LiTa3O8 Thin Films

doi:10.3724/SP.J.1077.2008.01106

Abstract

Abstract: A novel ferroelectric lithium tantalate LiTa₃O₈thin film was prepared on Pt/Ti/SiO ₂/Si substrate by sol-gel method using lithium ethoxide and tantalite ethoxide as starting materials. The structure of the LiTa₃O₈ film is similar to orthorhombic, which is different from LiTaO₃ film based on XRD pattern. The SEM image reveals that the LiTa₃O₈ film crystallized at 750℃ is uniform, smooth and crack-free on the surface with thickness of 1μm. The electrical experiments show that the remanent polarization P_r and coercive field E_c of the LiTa₃O₈film polarized at 450kV/cm are 9.3μC/cm² and 126.8kV/cm, respectively; the leakage current of the LiTa₃O₈ film is 8.85×10^-9A/cm² at the electric field of 9.5kV/cm, lower than that of LiTaO₃ film. The dielectric constant and dielectric loss of the LiTa₃O₈ film are 58.4 and 0.26, respectively, at frequency of 1kHz. And the crystallization temperature of sol-gel derived LiTa₃O₈ film is 50℃ higher than that of LiTaO₃film.

Key words: ferroelectric thin film, LiTa₃O₈, sol-gel, ferroelectric properties, dielectric properties

CLC Number:

TN215

ZHANG De-Yin,HUANG Da-Gui,LI Jin-Hua,LI Kun. Preparation and Electrical Properties of LiTa₃O₈ Thin Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.01106.

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Preparation and Electrical Properties of LiTa₃O₈ Thin Films

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