Influences of Bi2O3-B2O3 Glass Doping on Properties of ZnO-Bi2O3-TiO2-based Varistors

doi:10.3724/SP.J.1077.2010.00811

Abstract

Abstract:

The influences of Bi₂O₃-B₂O₃ glass additives on the microstructure and nonlinear electrical properties of ZnO-Bi₂O₃-TiO₂-based varistor were investigated. SEM images show that low melting Bi₂O₃-B₂O₃glass can help to increase ZnO grain size and refine microstructure with uniform grain size distribution at 900℃ through liquid phase sintering mechanism, whereas the grain size decreases with increasing ZnO-B₂O₃glass addition resulting from non-melting ZnO-B₂O₃glass pining the ZnO grain boundaries. The varistor ceramics with 2wt% Bi₂O₃-B₂O₃ glass addition own best nonlinear electrical properties with voltage gradient E_1mA=124.9V/mm, nonlinear coefficient α=46.2, leakage current density J_L=0.2μA/cm². For Bi₂O₃-B₂O₃ glass doped varistor, kinetic exponent nB and apparent activation energy QB are only 2.15 and 146.2kJ/mol which are much lower than that of ZnO-B₂O₃ glass doped varistor. The results reveal that Bi₂O₃-B₂O₃glass doping is more effective in improving the microstructure and electrical properties of ZnO-Bi₂O₃-TiO₂-based varistor than ZnO-B₂O₃ glass doping.

Key words: ZnO-B₂O₃ glass, Bi₂O₃-B₂O₃ glass, varistor, electrical properties, kinetic of grain growth

CLC Number:

TN304

WAN Shuai, LV Wen-Zhong. Influences of Bi₂O₃-B₂O₃ Glass Doping on Properties of ZnO-Bi₂O₃-TiO₂-based Varistors[J]. Journal of Inorganic Materials, 2010, 25(8): 811-814.

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Influences of Bi₂O₃-B₂O₃ Glass Doping on Properties of ZnO-Bi₂O₃-TiO₂-based Varistors

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