Abstract:

Lead zirconate titanate(PZT) ferroelectric thin films were prepared by both sol-gel and r.f. magnetron sputtering technologies. In order to decrease the crystallization temperature of thin films and improve the probabilities of nucleus, a PZT seed-layer was prepared by using the sol-gel method. The PZT ferroelectric thin films with about 500nm thickness were sputter-deposited from a Pb(Zr_xTi_1-x)O₃(x=0.3) ceramic target containing 10% excess Pb on PZT(seed layer)/Pt/Ti/SiO₂/Si substrates. The stepping-annealing with RTP (rapid theal process) was proposed for theal treatment of the PZT ferroelectric thin films. The PZT ferroelectric thin film showed good dielectric and pyroelectric properties
by pre-annealing at 450℃ for 5min and following post-annealing at 575℃ for 5min. The results of pyroelectric coefficient 2.3×10^-8C·cm^-2·K^-1, relative dielectric constant 500, dielectric loss 0.02, detectivity figure of merit 0.94×10^-5Pa^-0.5 were obtained.

Key words: uncooled pyroelectric infrared detectors, lead zirconate titanate(PZT), seed layer, rapid stepping-annealing