Wide Bandgap Engineering of β-(Al, Ga)2O3 Mixed Crystals

doi:10.15541/jim20160135

Abstract

Abstract:

Bandgap tunable β-(Al, Ga)₂O₃ mixed crystals with different Al³⁺concentration were grown by the optical floating zone (OFZ) method. When the nominal Al³⁺ doping concentration was close to 0.26, cracking appeared. The powder X-ray diffraction (XRD) revealed that β-(Al, Ga)₂O₃ mixed crystals kept the crystal structure of β-Ga₂O₃ without foreign phases and the lattice parameters decreased with the increasing Al³⁺ concentration. ²⁷Al magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy showed that Al³⁺ occupied Ga³⁺ positions and the ratio of Al³⁺(IV)/ Al³⁺(VI) was about 1:3.The transmittance spectra were measured to investigate the bandgap of β-(Al, Ga)₂O₃ mixed crystals. Results showed that the bandgap increased continuously with the Al³⁺ concentration increasing from 4.72 eV to 5.32 eV, which may extend the application of β-Ga₂O₃ crystal in optoelectronic devices operating at shorter wavelength.

Key words: β-Ga2O3, Al3+, bandgap, semiconductors

CLC Number:

TN304

XIAO Hai-Lin, SHAO Gang-Qin, SAI Qing-Lin, XIA Chang-Tai, ZHOU Sheng-Ming, YI Xue-Zhuan. Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals[J]. Journal of Inorganic Materials, 2016, 31(11): 1258-1262.

Figures/Tables 7

Fig. 1 Pictures of β-(Al, Ga)2O3 mixed crystal ingots doped with different Pictures of Al3+ concentrations(a) 0.09; (b) 0.17; (c) 0.23

Fig. 2 Al3+ concentration in mixed crystal x vs Al3+ concentration in mixed powder xp

Fig. 3 (a) Powder XRD patterns of β-(AlxGa1-x)2O3 (x = 0, 0.12, 0.31) mixed crystals and (b) The final observed, calculated and difference profiles for Rietveld refinement of the β-(Al0.12Ga0.88)2O3 structure

Table 1 Refined lattice parameters for β-(AlxGa1-x)2O3 (x = 0, 0.12, 0.31)

	a/nm	b/nm	c/nm	β /(˚)	V/nm³
β-Ga₂O₃	1.22289(3)	0.303736(16)	0.580719(19)	103.842(3)	0.209436(11)
β-(Al_0.12Ga_0.88)₂O₃	1.21859(2)	0.302667(18)	0.579099(18)	103.917(3)	0.207316(13)
β-(Al_0.31Ga_0.69)₂O₃	1.21173(4)	0.30040(3)	0.57660(3)	104.003(4)	0.203646(18)

Fig. 4 27Al MAS NMR spectra of series β-(AlxGa1-x)2O3 (x= 0.12, 0.22, 0.31) samples

Fig. 5 Transmittance of β-(Al, Ga)2O3 mixed crystals with different Al3+concentration in mixed crystals x. The insert is (αhυ)2 vs hυ plot of β-(Al, Ga)2O3 mixed crystals with different Al3+ concentration in mixed crystals x

Fig. 6 Bandgap of β-(Al, Ga)2O3 mixed crystal vs Al3+ concentration in mixed crystals x

References 24

[1]	GELLER S.Crystal structure of β-Ga2O3.The Journal of Chemical Physics, 1960, 33(3): 676-684.
[2]	AHMAN J, SVENSSON G, ALBERTSSON J.A reinvestigation of β-gallium oxide.Acta Crystallographica Section C-Crystal Structure Communications, 1996, 52(6): 1336-1338.
[3]	VILLORA E G, SHIMAMURA K, YOSHIKAWA K, et al.Large-size β-Ga2O3 single crystals and wafers.Journal of Crystal Growth, 2004, 270(3/4): 420-426.
[4]	AIDA H, NISHIGUCHI K, TAKEDA H, et al.Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method.Japanese Journal of Applied Physics, 2008, 47(11): 8506-8509.
[5]	GALAZKA Z, UECKER R, IRMSCHER K, et al.Czochralski growth and characterization of β-Ga2O3 single crystals.Crystal Research and Technology, 2010, 45: 1229-1236.
[6]	GALAZKA Z, IRMSCHER K, UECKER R, et al.On the bulk β-Ga2O3 single crystals grown by the Czochralski method.Journal of Crystal Growth, 2014, 404: 184-191.
[7]	UEDA N, HOSONO H, WASEDA R, et al.Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals.Applied Physics Letters, 1997, 70(26): 3561-3563.
[8]	KOKUBUN Y, MIURA K, ENDO F, et al. Sol-Gel prepared β-Ga2O3 thin films for ultraviolet photodetectors. Applied Physics Letters, 2007, 90(3): 031912-1-3.
[9]	OSHIMA T, OKUNO T, ARAI N, et al. Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates. Applied Physics Express, 2008, 1(1): 011202-1-3.
[10]	TOMM Y, KO J M, YOSHIKAWA A, et al.Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications.Solar Energy Materials and Solar Cells, 2001, 66(1-4): 369-374.
[11]	MATSUZAKI K, HIRAMATSU H, NOMURA K, et al.Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor.Thin Solid Films, 2006, 496(1): 37-41.
[12]	BARTIC M, BABAN C I, SUZUKI H, et al.β-gallium oxide as oxygen gas sensors at a high temperature.Journal of the American Ceramic Society, 2007, 90(9): 2879-2884.
[13]	OGITA M, YUASA S, KOBAYASHI K, et al.Presumption and improvement for gallium oxide thin film of high temperature oxygen sensors.Applied Surface Science, 2003, 212: 397-401.
[14]	FLEISCHER M, MEIXNER H.Gallium oxide thin-films - a new material for high-temperature oxygen sensors.Sensors and Actuators B-Chemical, 1991, 4(3/4): 437-441.
[15]	ZHANG F B, SAITO K, TANAKA T, et al.Wide bandgap engineering of (GaIn)2O3 films.Solid State Communications, 2014, 186: 28-31.
[16]	ZHANG F B, SAITO K, TANAKA T, et al. Wide bandgap engineering of (AlGa)2O3 films. Applied Physics Letters, 2014, 105(16): 162107-1-5.
[17]	KAUN S W, WU F, SPECK J S.β-(AlxGa1-x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma- assisted molecular beam epitaxy. Journal of Vacuum Science & Technology A, 2015, 33: 041508-1-9.
[18]	WAKABAYASHI R, OSHIMA T, HATTORI M, et al.Oxygen- radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1-x)2O3 ﬁlms.Journal of Crystal Growth, 2015, 424: 77-79.
[19]	SCHMIDT-GROUD R, KRANERT C, VON WENCKSTERN H, et al. Dielectric function in the spectral range (0.5-8.5) eV of an (AlxGa1-x)2O3 thin film with continuous composition spread. Journal of Applied Physics, 2015, 117: 165307-1-7.
[20]	ZHENG S W, FAN G H, PI H.Study on the electronic sructures and energy band properties of Al-doped β-Ga2O3.Journal of Functional Materials, 2014, 12(45): 12102-12107.
[21]	YAMAGUCHI K.First principles study on electronic structure of β-Ga2O3.Solid State Communications, 2004, 131(12): 739-744.
[22]	HE H Y, BLANCO M A, PANDEY R.Electronic and thermodynamic properties of β-Ga2O3.Applied Physics Letters, 2006, 88(26): 261904-1-3.
[23]	ZHENG S W, FAN G H, ZHANG Y, et al. Study on the lattice constants and energy band properties of Be and Ca doped wurtzite ZnO. Acta Physica Sinica, 2012, 61(22): 227101-1-8.
[24]	LAURENTI J P, ROENTGEN P, WOLTER K, et al.Indium-doped GaAs-a very dilute alloy system.Physical Review B, 1988, 37(8): 4155-4163.

Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals

RichHTML

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 7

References 24

Related Articles 9

Recommended Articles 0

Metrics

Comments

[1]	YU Ruixian, WANG Guodong, WANG Shouzhi, HU Xiaobo, XU Xiangang, ZHANG Lei. Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method [J]. Journal of Inorganic Materials, 2023, 38(3): 343-349.
[2]	XIONG Jinyan, LUO Qiang, ZHAO Kai, ZHANG Mengmeng, HAN Chao, CHENG Gang. Facilely Anchoring Cu nanoparticles on WO₃ Nanocubes for Enhanced Photocatalysis through Efficient Interface Charge Transfer [J]. Journal of Inorganic Materials, 2021, 36(3): 325-331.
[3]	LIANG Yu, LIANG Ling-Yan, WU Wei-Hua, PEI Yu, YAO Zhi-Qiang, CAO Hong-Tao. Microfluidic-method-processed p-type NiO_x Thin-film Transistors [J]. Journal of Inorganic Materials, 2019, 34(1): 79-84.
[4]	AO Wei-Dong, LIU Yan, MA Qing-Shan, LIU Huan, ZHOU Bin, ZHENG Xiao-Jia, YU Dong-Qi, ZHANG Wen-Hua. Controllable Synthesis of Vertically Aligned ReS_2(1-_x₎Se₂_x Nanosheets with Tunable Chemical Compositions and Bandgaps [J]. Journal of Inorganic Materials, 2018, 33(10): 1083-1088.
[5]	WANG Hua-Jie, LIU Xue-Chao, KONG Hai-Kuan, XIN Jun, GAO Pan, ZHUO Shi-Yi, SHI Er-Wei. Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method [J]. Journal of Inorganic Materials, 2017, 32(2): 215-218.
[6]	CAO Li-Li, WANG Yao, DENG Yuan, LUO Bing-Wei, ZHU Wei, SHI Yong-Ming，LIN Zhen. Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method [J]. Journal of Inorganic Materials, 2014, 29(2): 215-219.
[7]	LIU Xue-Zhen, BAO Shan-Yong, ZHANG Huan-Huan, MA Chun-Yu, XU Xiao-Ming, ZHANG Qing-Yu . Study on the Magnetism of Epitaxial ZnCoO Films Deposited by Pulsed Laser Deposition [J]. Journal of Inorganic Materials, 2012, 27(4): 369-374.
[8]	LIU Xue-Chao,CHEN Zhi-Zhan,SHI Er-Wei,SONG Li-Xin. Recent Progress in the Magnetism Theory of ZnO-based Diluted Magnetic Semiconductors [J]. Journal of Inorganic Materials, 2009, 24(1): 1-7.
[9]	LIU Xue-Chao,SHI Er-Wei,ZHANG Hua-Wei,SONG Li-Xin,CHEN Zhi-Zhan. Recent Progress in Developing ZnO-based Thin Films of Diluted Magnetic Semiconductors [J]. Journal of Inorganic Materials, 2006, 21(3): 513-520.