高级检索
无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

相变光盘介电层ZnS-SiO2薄膜的性能研究

刘波; 阮昊; 干福熹   

  1. 中国科学院上海光学精密机械研究所 上海 201800
  • 收稿日期:2001-12-13 修回日期:2002-02-01 出版日期:2003-01-20 网络出版日期:2003-01-20

Characteristics of ZnS-SiO2 Film Used as Phase-change Optical Disk Dielectric Layer

LIU Bo; RUAN Hao; CAN Fu-Xi   

  1. Shanghai Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Shanghai 201800; China
  • Received:2001-12-13 Revised:2002-02-01 Published:2003-01-20 Online:2003-01-20

PDF (PC)

1264

摘要： 利用AFM、XRD、TEM、紫外可见光谱仪和椭偏仪等多种研究手段研究了ZnS-SiO2薄膜的性能.研究表明,沉积态ZnS-SiO2薄膜为非晶态,表现为层核生长型(Straski-Krastanov型)结构,表面很平滑,其中包含着大小为2-10nm的微小晶粒;ZnS-SiO2薄膜的透过率比较大,消光系数很小,这可以减少入射激光能量的损失;ZnS-SiO2薄膜拥有比较高的折射率,能够对记录层起到很好的保护作用.

关键词: ZnS-SiO2, 介电层, 相变光盘

Abstract: The characteristics of ZnS-SiO_2 dielectric film were studied by using AFM, XRD, TEM, UV/Vis/NIR
spectrometer, and spectroscopic ellipsometer methods. It was indicated that the as-deposited ZnS-SiO2 film is amorphous and has Straski-Krastanov type
growth characteristic. The surface of the ZnS-SiO2 film is very smooth. The grain size of the ZnS-SiO2 film is very small, around 2～10nm. The
transmissivity of the ZnS-SiO2 film is large and the extinction coefficient is very small, which are beneficial to reduce the loss of laser power. The
refractive index of the ZnS-SiO2 film is large and the recording layer can be protected very well.

Key words: ZnS-SiO2, dielectric layer, phase-change optical disk

中图分类号: