偏轴磁控溅射法外延BiFeO3薄膜的介电性能与阻变效应

doi:10.15541/jim20170603

无机材料学报 ›› 2018, Vol. 33 ›› Issue (9): 1017-1021.DOI: 10.15541/jim20170603 CSTR: 32189.14.10.15541/jim20170603

偏轴磁控溅射法外延BiFeO₃薄膜的介电性能与阻变效应

宋建民^{1, 2}, 代秀红¹, 梁杰通¹, 赵磊¹, 周阳¹, 葛大勇¹, 孟旭东³, 刘保亭¹

1. 河北大学物理科学与技术学院, 保定071002;
2. 河北农业大学理学院, 保定071001;
3. 河北北方学院理学院, 张家口 075000

收稿日期:2017-12-20 修回日期:2018-02-11 出版日期:2018-09-20 网络出版日期:2018-08-14
作者简介:宋建民(1976-), 男, 博士研究生. E-mail: sjm@hebau.edu.cn
基金资助:
国家自然科学基金(11374086, 11474174);河北省自然科学基金(E2014201188, E2014201063, A2018201168);河北省教育厅基金(2016058);河北农业大学理工基金(ZD20160614)

Resistive Switching Effect and Dielectric Property of Epitaxial BiFeO₃ Thin Films by Off-axis Magnetron Sputtering

SONG Jian-Min^{1, 2}, DAI Xiu-Hong¹, LIANG Jie-Tong¹, ZHAO Lei¹, ZHOU Yang¹, GE Da-Yong¹, MENG Xu-Dong³, LIU Bao-Ting¹

1. College of Physics Science & Technology, Hebei University, Baoding 071002, China;
2. College of Science, Agriculture University of Hebei, Baoding 071001, China;
3. College of Science, Hebei North University, Zhangjiakou 075000, China

Received:2017-12-20 Revised:2018-02-11 Published:2018-09-20 Online:2018-08-14
About author:SONG Jian-Min. E-mail: sjm@hebau.edu.cn
Supported by:
National Natural Science Foundation of China (11374086, 11474174);Natural Science Foundation of Hebei Province (E2014201188, E2014201063, A2018201168);Foundation of Education Bureau of Hebei Province (2016058);Science and Technology Fund of Hebei Agriculture University (ZD 20160614)

摘要/Abstract

摘要：

利用偏轴射频磁控溅射法, 在(001) SrTiO₃(STO)单晶基片上制备了Pt/BiFeO₃/La_0.5Sr_0.5CoO₃/STO (Pt/BFO/ LSCO/STO)异质结电容器。研究了BiFeO₃薄膜的结构和物理性能。原子力显微镜(AFM)和X射线衍射(XRD)分析表明: BFO薄膜结晶质量良好, 且为单相(00l)外延钙钛矿结构。介电性能测试结果发现: 在5 V驱动电压下, Pt/BFO/LSCO电容器呈现饱和的蝶形回线, 调谐率和介电损耗分别为14.1%和0.19。此外, 阻变机制研究表明: 在0→5→0 V正向电压和0→-5→0 V负向电压下, 阻变均为高阻向低阻转变规律, 呈现为铁电二极管的阻变开关行为。通过I-V曲线拟合, 得到0→5→0→-5 V时阻变机制为空间电荷限制电流陷阱能级的填充和脱陷, 而-5→0 V时符合界面限制的F-N隧穿机制。

关键词: 铁酸铋薄膜, 介电常数, 阻变效应, 导电机制

Abstract:

The Pt/BiFeO₃/La_0.5Sr_0.5CoO₃/SrTiO₃(Pt/BFO/LSCO/STO) heterostructures were fabricated on (001) SrTiO₃ substrate by off-axis RF magnetron sputtering, on which epitaxial BiFeO₃(BFO) thin films were suecessfully grown. The BFO thin film shows good crystal quality with (00l) epitaxial growth as confirmed by the atomic force microscope (AFM) and X-ray diffraction (XRD). Pt/BFO/LSCO capacitor exhibits a saturated butterfly loop with tuning rate of 14.1% and dielectric loss of 0.19 at 5 V driving voltage. Moreover, the resistance changes from high value to low value with positive voltage 0→5→0 V and negative voltage 0→-5→0 V, which displays switch behavior of ferroelectric diode resistance-change. Based on the I-V fitting curves, the resistance change mechanism fits the space charge limited current trap level when 0→5→0→-5 V and the interface limit F-N tunneling mechanism as -5→0 V, respectively.

Key words: BiFeO₃ thin films, dielectric constant, resistive effect, conduction mechanism

中图分类号:

O484

宋建民, 代秀红, 梁杰通, 赵磊, 周阳, 葛大勇, 孟旭东, 刘保亭. 偏轴磁控溅射法外延BiFeO₃薄膜的介电性能与阻变效应[J]. 无机材料学报, 2018, 33(9): 1017-1021.

SONG Jian-Min, DAI Xiu-Hong, LIANG Jie-Tong, ZHAO Lei, ZHOU Yang, GE Da-Yong, MENG Xu-Dong, LIU Bao-Ting. Resistive Switching Effect and Dielectric Property of Epitaxial BiFeO₃ Thin Films by Off-axis Magnetron Sputtering[J]. Journal of Inorganic Materials, 2018, 33(9): 1017-1021.

图/表 5

图1 (a) BFO薄膜的AFM图; (b) BFO/LSCO/STO异质结的X射线衍射图谱

Fig. 1 (a) AFM image of BFO thin film and (b) XRD pattern of BFO/LSCO/STO heterostructures

图2 (a) Pt/BFO/LSCO异质结中BFO薄膜的介电频谱; (b) Pt/BFO/LSCO异质结中BFO薄膜的介电常数和介电损耗随电压的变化曲线

Fig. 2 (a) Frequency dependence of dielectric constant and dielectric loss of BFO thin film in Pt/BFO/LSCO heterostructures, and (b) voltage dependence of dielectric constant and dielectric loss of BFO thin film in Pt/BFO/LSCO heterostructures

图3 Pt/BFO/LSCO异质结I-V曲线

Fig. 3 I-V curves of Pt/BFO/LSCO heterostructures(a) Linear coordinate; (b) Logarithmic coordinate

图4 Pt/BFO/LSCO异质结lgI-lgV拟合曲线

Fig. 4 lgI-lgV fitting curves of Pt/BFO/LSCO heterostructures

图5 Pt/BFO/LSCO异质结-5→0 V电压下ln(J/V2)-V-1拟合曲线

Fig. 5 ln(J/V2)-V-1 fitting curve of Pt/BFO/LSCO heterostructures at -5 V→0 V

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偏轴磁控溅射法外延BiFeO₃薄膜的介电性能与阻变效应

Resistive Switching Effect and Dielectric Property of Epitaxial BiFeO₃ Thin Films by Off-axis Magnetron Sputtering

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