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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

二氧化钒薄膜在α-Al2O3衬底上的外延生长及其金属-半导体相变特性研究

吴召平; 方平安   

  1. 中国科学院上海硅酸盐研究所, 上海 200050
  • 收稿日期:1998-11-04 修回日期:1999-03-24 出版日期:1999-10-20 网络出版日期:1999-10-20

Epitaxial Growth and Phase Transition Properties of Vanadium DioxideThin Film on Sapphire Substrate

WU Zhao-Ping; FANG Ping-An   

  1. Shanghai institute of Ceramics; Chinese Academy of Sciences Shanghai 200050 China
  • Received:1998-11-04 Revised:1999-03-24 Published:1999-10-20 Online:1999-10-20

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摘要： 利用ＸＲＤ及ＸＲＤ极图技术表征了用激光剥离技术生长的ＶＯ２薄膜．结果表明：在衬底温度为５００℃，氧气偏压６．６７Ｐａ的条件下，在Ａｌ２Ｏ３（１１２０）衬底上能实现ＶＯ２的二维外延生长．薄膜的结构除了与沉积工艺有关外，还和衬底的取向密切相关．在Ａｌ２Ｏ３（１１２０）衬底上，定向生长的（１００）ＶＯ２在Ｍｉｌｌａｒ指数＜５时，除了［０１０］以外，不存在其他晶格矢量与衬底相匹配，从而不可能实现三维单晶薄膜的外延生长．电学特性的测试结果显示，在温度为６５℃左右，ＶＯ２薄膜出现相交，薄膜的电阻率变化达４个数量级．

关键词: 二氧化钒, 相变, 极图, 外延

Abstract: Vanadium Dioxide(VO2) thin films deposited on(1120) sapphire substrates by pulsed laser ablation were characterized by using the techniques of XRD，
XRD pole figure，RBS/channeling and electrical measurements．The results show that VO2 thin film on the (1120) sapphire grows epitaxially
with out-of-plane:(100)VO2//(1120)sapphire and in-plane: VO2[010]//sapphire[0001]．Channeling cannot be found in RBS/Channeling analysis，indicating that the film
fails to single crystalline growth. The further analysis of the crystallography of the (100)VO2 reveals that within 5 1attice periods，no other lattice vector
exists in the (100) plane of VO2 to match the lattice of sapphire，therefore，it is impossible to deposit single

Key words: VO2，phase transition，pole figure，epitaxy

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