C-H-N体系生长金刚石薄膜

无机材料学报

C-H-N体系生长金刚石薄膜

万永中¹; 张志明¹; 沈荷生¹; 何贤昶¹; 张卫²; 王季陶²

1. 上海交通大学微电子研究所; 上海 200030; 2. 上海复旦大学电子工程系; 上海 200433

收稿日期:1998-11-10 修回日期:1998-12-16 出版日期:1999-12-20 网络出版日期:1999-12-20

Phase Diagrams in C-H-N System for Low Pressure CVD Diamond Growth

WAN Yong-Zhong¹; ZHANG Zhi-Ming¹; SHEN He-Sheng¹; HE Xian-Chang¹; ZHANG Wei²; WANG Ji-Tao ²

1. Microelectronic Technique Center; Shanghai Jiao Tong University; Shanghai 200030; China; 2. Dept. of Electronic Engineering; Fudan University; Shanghai 200433; China

Received:1998-11-10 Revised:1998-12-16 Published:1999-12-20 Online:1999-12-20

摘要/Abstract

摘要： 通过热力学分析从理论计算上给出了C－H－N体系中低压生长金刚石的三元相图．该相图中存在金刚石生长区．不同温度和压强下金刚石生长区几乎都位于CH₄－N连线以下，并且随衬底温度的改变而有显著的变化．随着氮含量的增加，金刚石生长区向碳含量减少的方向移动．使用该相图对优化添加含氮气源生长金刚石的实验条件提供了理论依据．

关键词: 金刚石, 含氮气源, 相图, 化学气相淀积

Abstract: The ternary C-H-N phase diagrams for low pressure diamond growth were theoretically calculated through thermodynamic analysis. Thcre are diamond growth regions in these phase diagrams. Almost all the diamond growth regions in triangle phase diagrams located below the CH₄-N line in the low carbon concentration region, and its shape and position change greatly with substrate temperature. The diamond growth regions allow us to optimize the experimental conditions of low pressure CVD diamond growth with nitrogen addition.

Key words: chemical vapor deposition, diamond, phase diagram, nitrogen

中图分类号:

TQ163

万永中,张志明,沈荷生,何贤昶,张卫,王季陶. C-H-N体系生长金刚石薄膜[J]. 无机材料学报.

WAN Yong-Zhong,ZHANG Zhi-Ming,SHEN He-Sheng,HE Xian-Chang,ZHANG Wei,WANG Ji-Tao. Phase Diagrams in C-H-N System for Low Pressure CVD Diamond Growth[J]. Journal of Inorganic Materials.

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