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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

掺杂对PMN铁电陶瓷烧结工艺和介电性能的影响

杨毅; 冯楚德; 姚文龙; 喻佑华   

  1. 中国科学院上海硅酸盐研究所功能陶瓷研究与发展工程中心 上海 200050
  • 收稿日期:2000-12-27 修回日期:2001-03-12 出版日期:2002-01-20 网络出版日期:2002-01-20

Effects of Doping on Sintering Process and Dielectric Properties of PMN Ceramics

YANG Yi; FENG Chu-De; YAO Wen-Long; YU You-Hua   

  1. Functional Ceramics Research and Development Engineering Center; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2000-12-27 Revised:2001-03-12 Published:2002-01-20 Online:2002-01-20

PDF (PC)

1025

被引次数

32

摘要： 使用常用的两步法，研究了基体掺杂不同物质对ＰＭＮ陶瓷的烧结工艺和介电性能的影响．经研究发现，当掺杂 １ｍｏｌ％Ｌｉ２Ｏ时，可以实现 ９５０～１０００℃左右的中温烧结，材料的常温介电常数和介电损耗分别为 １３５００和 ０．５５％，都优于纯 ＰＭＮ．当掺杂 ２ｍｏｌ％时，可以将烧结温度降到８００～９００℃的低温烧结范围，且介电损耗明显下降．分析结果表明；材料的显微结构良好，材料的致密化程度较高．另外，掺加 Ｌｉ２Ｏ和 ＳｒＯ可以分别稍微减小和增加材料的弥散相变程度．同时本文还研究了ＰＭＮ陶瓷的微观结构和介电弛豫的情况．

关键词: 铌镁酸铅, 烧结工艺, 掺杂, 介电

Abstract: Sintering process and dielectric properties were studied by adding a small amount of different dopants into PMN ceramics using normal two-step method. When doped
with 1mol% Li2O, the sintering temperature of PMN can be reduced to 950～1000℃. The dielectric constant and loss tangent of this material are 13500 and 0.55%
respectively, which are better than those of pure PMN. When doped with 2mol% SrO, low temperature sintering about 800～900℃ can be attained while
its loss tangent at room temperature reduced to only 0.36%. Analysis results show that the materials have good microstructures and are highly condensed. Anyhow,
doped with Li2O and SrO can slightly lower and enhance the extent of diffuse phase transition (DPT).

Key words: Pb（Mg1/3Nb2/3）O3, sintering process, doping, dielectric

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