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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

掺镁钛酸锶(SrTiO3)陶瓷的导电机理研究

周晓华1; SφrensenO．Toft2; 曹全喜1; 徐毓龙1   

  1. 1. 西安电子科技大学技术物理系; 西安 710071; 2. 丹麦Risφ国家实验室材料研究部; Roskilde, DK－4000
  • 收稿日期:1999-01-11 修回日期:1999-03-01 出版日期:1999-12-20 网络出版日期:1999-12-20

Study on Electrical Conduction Mechanism of Mg-doped SrTiO3 Ceramics

ZHOU Xiao-Hua1; Sφrensen O. Toft2; CAO Quan-Xi1; XU Yu-Long 1   

  1. 1. Department of Technical Physics; Xidian University; Xi an 710071; China; 2. Materials Department; Risφ National Laboratory; Roskilde DK-4000; Denmark
  • Received:1999-01-11 Revised:1999-03-01 Published:1999-12-20 Online:1999-12-20

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摘要： 本文着重讨论了掺镁SrTiO3陶瓷的电导与温度和环境氧分压之间的关系．在SrTiO3中镁的含量分别选为10、20、30、40和50mol％，所有样品均在20～900℃的温度区间和3．8×10－4～2．6×10－1atm的氧分压范围被测试．结果表明，所有样品均呈现p型半导体的导电特征，样品在不同温度下的R∝P-1/mO2关系中的m与镁的含量和温度有关．根据X光衍射图和缺陷化学理论，实验结果得到适当的解释．

关键词: 钛酸锶陶瓷缺陷化学非化学计量电导率

Abstract: The dependence of the electrical conduction of Mg-doped SrTiO3 ceramics on the temperature and the oxygen partial
pressure was discussed. The Mg contents in SrTiO3 were taken as 10mol%(sample 1), 20mol%(sample 2), 30mol%(sample 3), 40mol%(sample 4) and 50mol%(sample 5), respectively. All samples were
measured in the temperature range 20～900℃ and PO2 region from 3.8×10-4 to 1.2×10-1 atm. The results show that all samples
exhibit p-type semiconduction. The factor m from R∝ PO2-1/m is dependent on temperature and Mg content in SrTiO3. The obtained results
can be appropriately explained according to the X-ray diffraction patterns and the theory of defect chemistry.

Key words: SrTiO3 ceramic, defect chemistry, nonstoichiometry, electrical conductivity

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