基于划刻实验的单晶锗材料去除机理研究

doi:10.15541/jim20180500

无机材料学报 ›› 2019, Vol. 34 ›› Issue (8): 867-872.DOI: 10.15541/jim20180500

基于划刻实验的单晶锗材料去除机理研究

耿瑞文¹,杨晓京¹(),谢启明²,李芮³,罗良¹

^1. 昆明理工大学机电工程学院, 昆明 650500
^2. 昆明物理研究所, 昆明 650233
^3. 昆明理工大学环境科学与工程学院, 昆明 650500

收稿日期:2018-10-18 修回日期:2018-11-26 出版日期:2019-08-20 网络出版日期:2019-05-29
作者简介:耿瑞文(1993-), 男, 博士研究生. E-mail: precious.grw@gmail.com
基金资助:
国家自然科学基金(51765027)

Material Removal Mechanism of Monocrystalline Germanium Based on Nano-scratch Experiment

GENG Rui-Wen¹,YANG Xiao-Jing¹(),XIE Qi-Ming²,LI Rui³,LUO Liang¹

^1. Faculty of Mechanical and Electrical Engineering, Kunming University of Science and Technology, Kunming 650500, China
^2. Kunming Institute of Physics, Kunming 650233, China
^3. Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming 650500, China

Received:2018-10-18 Revised:2018-11-26 Published:2019-08-20 Online:2019-05-29
Supported by:
National Natural Science Foundation of China(51765027)

摘要/Abstract

摘要：

采用Cube压头对单晶锗进行变载与恒载纳米划刻实验, 利用扫描电子显微镜和原子力显微镜对已加工表面进行观测, 根据表面形貌将划刻过程分为延性域、脆塑转变域及脆性域三种, 对各个阶段的表面成型及材料去除方式进行了研究。使用最小二乘法对不同阶段划刻力进行非线性拟合, 并利用相关系数检验拟合函数可靠性, 结果表明划刻力与划刻深度存在强相关性。同时分析了单晶锗的弹性回复率随划刻距离的变化趋势, 结果表明工件的弹性回复率将从纯弹性阶段的1逐步回落至0.76左右。基于脆塑转变临界载荷, 以裂纹萌生位置作为脆塑转变标志, 首次结合工件已加工表面弹性回复, 提出一种适用于计算单晶锗的脆塑转变临界深度模型, 其脆塑转变临界深度为489 nm。

关键词: 单晶锗, 纳米划刻实验, 表面形貌, 材料去除, 弹性回复, 脆塑转变

Abstract:

A varied and constant load nano-scratch experiment on monocrystalline germanium was performed by Cube indenter. The surface morphology of the groove was observed by scanning electron microscope (SEM) and atomic force microscope (AFM) , and the scratch process was divided into three regimes, that is ductile regime, ductile-brittle transition regime and brittle regime based on observations. The material removal mechanism of different regimes was also analyzed. The least square method was used to establish nonlinear curve fittings between scratch depth and scratch force, and the correlation coefficient was used to verify reliability of fitting functions. Result shows that there is a strong correlation between scratch depth and scratch force. Meanwhile, the tendency of elastic recovery rate with scratch distance was analyzed. As the result shows, the elastic recovery rate gradually decreases from 1 in the pure elastic stage to about 0.76 in stable stage. Based on ductile-brittle translation critical load, a model is proposed to calculate the critical depth where the elastic recovery rate is firstly considered, and the ductile-brittle translation critical depth for monocrystalline germanium is 489 nm.

Key words: monocrystalline germanium, nano-scratch experiment, surface morphology, material removal, elastic recovery, ductile-brittle translation

中图分类号:

TN304

耿瑞文, 杨晓京, 谢启明, 李芮, 罗良. 基于划刻实验的单晶锗材料去除机理研究[J]. 无机材料学报, 2019, 34(8): 867-872.

GENG Rui-Wen, YANG Xiao-Jing, XIE Qi-Ming, LI Rui, LUO Liang. Material Removal Mechanism of Monocrystalline Germanium Based on Nano-scratch Experiment[J]. Journal of Inorganic Materials, 2019, 34(8): 867-872.

图/表 11

表1 纳米划刻实验参数

Table 1 Nano-scratch test parameters

Test parameters	Value
Scratch crystal plane	(100)
Scratch distance/μm	500
Scratch speed/(μm?s^-1)	5
Load rate/(mN?μm^-1)	0.25
Normal load range/mN	0-125
Const normal load/mN	20/35/50

图1 划刻实验示意图

Fig. 1 Diagram of nano-scratch experiment

图2 划痕的整体形貌及其局部放大图

Fig. 2 Scratch morphology and its local amplification (a) Overall morphology; (b) Ductile regime; (c) DBT regime; (d) Brittle regime

图3 单晶锗划刻深度随划刻距离变化曲线

Fig. 3 Curves of scratch distance vs depth for monocrystalline germanium

图4 定载荷划刻的AFM图像

Fig. 4 AFM images of const load scratch (a) 20 mN; (b) 35 mN; (c) 50 mN

图5 单晶锗裂纹分布示意图

Fig. 5 Diagram of crack distribution for monocrystalline germanium

表2 不同划刻域的载荷范围、划刻距离范围

Table 2 Load and scratch distance ranges for diffirent regimes

Regime	Load range/mN	Scratch distancerange/μm
Ductile regime	0-48	100-298
DBT regime	48-100	298-500
Brittle regime	100-125	500-600

图6 划刻力随划刻距离变化曲线

Fig. 6 Curves of scratch force vs distance

图7 单晶锗划刻力随划刻深度变化曲线

Fig. 7 Curves of scratch force vs depth for monocrystalline germanium (a) Normal force; (b) Tangental force

图8 弹性回复率随划刻距离变化图

Fig. 8 Curve of elastic recovery rate during scratching

图9 单晶锗划刻过程压头与工件接触模型

Fig. 9 Indenter-workpiece contract model in scratch process

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基于划刻实验的单晶锗材料去除机理研究

Material Removal Mechanism of Monocrystalline Germanium Based on Nano-scratch Experiment

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