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交换耦合双层膜NiO/Ni81Fe19的基片温度效应研究

邱进军1; 李佐宜1; 郑远开1; 李震1; 林更琪1; 熊锐1; 胡作启1; 卢志红2   

  1. 1. 华中理工大学电子科学与技术系; 武汉 430074; 2. 中国科学院上海冶金研究所, 上海 200050
  • 收稿日期:1998-12-10 修回日期:1999-04-05 出版日期:1999-12-20 网络出版日期:1999-12-20

Effect of Substrate Temperature on NiO/Ni81Fe19 Exchange Coupling Double-layered Films

QIU Jin-Jun1; LI Zuo-Yi1; ZHENG Yuan-Kai1; LI Zhen1; LIN Geng-Qi1; XIONG Rui1; HU Zuo-Qi1; LU Zhi-Hong 2   

  1. 1. Dept. of Electronic Sci. & Tech.; Huazhong University of Sci. & Tech.; Wuhan 430074; China; 2. Shanghai Metallurgy Institute; Chinese academy of Sciences; Shanghai 200050, China
  • Received:1998-12-10 Revised:1999-04-05 Published:1999-12-20 Online:1999-12-20

摘要: 用射频磁控溅射方法在不同基片温度下玻璃基片上分别制备NiO单层膜、NiFe单层膜和NiO/NiFe双层膜,研究了不同基片温度对膜的磁性能的影响.用振动样品磁强计(VSM)分析了膜的磁特性,结果表明:基片温度260℃时淀积的NiFe膜矫顽力Hc为184A·m-1,小于室温淀积NiFe膜的Hc(584A·m-1),且磁滞回线的矩形度更好.室温下淀积NiO(50nm)/NiFe(15nm)双层膜的Hc为4000A·m-1,交换耦会场(HEX)仅为1600A·m-1,磁滞回线的短形度很差,而260℃时淀积的双层膜的Hc下降到3120A·m-1HEX却增大为4640A·m-1,同时磁滞回线的矩形度也得到改善,其截止温度TB高达230℃.X射线衍射(XRD)分析了膜的织构,结果表明:室温下淀积NiO膜呈现(220)织构,而260℃时淀积NiO膜呈现(111)织构;室温和260℃淀积的NiFe膜都呈(111)织构,但后者晶粒比前者大.

关键词: 基片温度, 交换耦合, 矫顽力

Abstract: NiO films, NiFe films and double-layered NiO/NiFe films were prepared on glass substrates by rf magnetron
sputtering. The temperature of substrates (TS) were varied from room temperature (TR) to 300℃. The HC of NiFe films
deposited at TR was 584A·m-1, it became 184A·m-1 while the TS increased to 260℃ and the squareness of hysteresis loop became better. The HC and HEX of NiO (50 nm)/
NiFe (15 nm) deposited at TR were 4000A·m-1 and 1600A·m-1, respectively. The HC decreased to 3120A·m-1 and HEX
increased to 4640A·m-1 while the TS was 260℃. The squareness of hysteresis loop also became better and the blocking temperature (TB) was 230℃. XRD analysis indicated that the NiO films deposited at TR presented (220) texture whereas the films deposited at 260℃ showed (111) texture. The NiFe films deposited
at TR and 260℃ both presented (111) texture, but the crystal particle size of the latter was larger.

Key words: temperature of substrate, exchange coupling, coercivity

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