无机材料学报

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H2S气敏材料研究进展

方国家1,2,3; 刘祖黎2; 吉向东3; 姚凯伦1,2   

  1. 1. 华中理工大学物理系; 武汉 430074; 2. 华中理工大学激光技术国家重点实验室; 武汉 430074; 3. 襄樊学院物理系信息与功能材料研究室; 襄樊 441053
  • 收稿日期:1997-11-17 修回日期:1998-01-13 出版日期:1998-12-20 网络出版日期:1998-12-20

Research Progress on H2S Gas Sensing Materials

FANG Guo-Jia1,2,3; LIU Zu-Li2; JI Xiang-Dong3; YAO Kai-Lun1,2   

  1. 1.State Key Lab of Laser Tech.; Huazhong Univ. of Sic. Tech. Wuhan 430074 China;2. Dept. of Physics; Huazhong Univ. of Set & Tech. Wuhan 430074 China; 3. Information and Functional Materials Research Group, Dept. of Physics, Xiangfan College Xiangfan 441053 China
  • Received:1997-11-17 Revised:1998-01-13 Published:1998-12-20 Online:1998-12-20

摘要: 本文综述了固体电解质、氧化物半导体(体材、厚膜、薄膜)型H2S气敏材料的研究进展及其应用.特别介绍了常温薄膜型H2S气敏材料的最新研究动态.

关键词: H2S气敏材料, 薄膜型, 常温化

Abstract: The application of H2S gas sensing materials and research progress on H2S gas sensing materials in the form of solid electrolytes and semiconductive oxides (sintered block, thick film andthin film) were reviewed in this paper, and the latest development of room temperature H2S gassensing thin films was discussed especially.

Key words: H2S gas sensing materials, thin film type, room temperature operating

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