原位退火提高Bi0.64Sb1.36Te3外延热电薄膜的空穴浓度与电性能

doi:10.15541/jim20260160

无机材料学报

• 研究论文 •

原位退火提高Bi_0.64Sb_1.36Te₃外延热电薄膜的空穴浓度与电性能

李先达^1,2, 吴祎辰^1,3, 柳伟¹, 唐新峰¹

武汉理工大学 1.材料复合新技术全国重点实验室;2.材料科学与工程国际化示范学院(材料与微电子学院);3.材料科学与工程学院,武汉 430070

收稿日期:2026-04-14 修回日期:2026-05-28
通讯作者: 柳伟, 研究员. E-mail: w.liu@whut.edu.cn
作者简介:李先达(2000-), 男, 博士研究生. E-mail: wuyichen@whut.edu.cn
基金资助:
国家重点研发计划 (2021YFA0718700); 国家自然科学基金(52571255)

Improved Hole Density and Electrical Properties of Bi_0.64Sb_1.36Te₃ Epitaxial Thermoelectric Thin Films via in-situ Annealing

LI Xianda^1,2, WU Yichen^1,3, LIU Wei¹, TANG Xinfeng¹

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;
2. International School of Materials Science and Engineering (School of Materials and Microelectronics), Wuhan University of Technology, Wuhan 430070, China;
3. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

Received:2026-04-14 Revised:2026-05-28
Contact: LIU Wei, professor. E-mail: w.liu@whut.edu.cn
About author:LI Xianda (2000-), male, PhD candidate. E-mail: wuyichen@whut.edu.cn
Supported by:
The National Key R&D Program of China (2021YFA0718700); National Natural Science Foundation of China (52571255)

摘要/Abstract

摘要： p型(Bi,Sb)₂Te₃薄膜是薄膜热电器件研究的重要材料平台,其性能优化受到了热电领域的广泛关注。热退火是同时优化空穴浓度与结晶质量的重要途径,但实际的优化效果往往不明显。为了探究其原因,本研究利用分子束外延技术制备结晶质量高、组成优化的p型Bi_0.64Sb_1.36Te₃薄膜,研究了退火对微结构和电输运性能的影响规律。结果发现,在580 K原位退火引入了Bi/SbTe'本征点缺陷并且提升了薄膜结晶质量,同时优化了空穴浓度和迁移率。这说明点缺陷结构与结晶质量优化是退火提升薄膜电性能的关键。580 K退火2 h的Bi_0.64Sb_1.36Te₃薄膜具有所有薄膜中最优异的电性能,其空穴浓度达4.05×10¹⁹ cm^-3。此时多价带参与电输运,因而获得了优异的室温功率因子(5.14 mW·m^-1·K^-2),达到了该薄膜材料体系的最高水平。

关键词: Bi_2-_xSb_xTe薄膜, 分子束外延, 原位退火, 电输运性能

Abstract: p-type (Bi,Sb)₂Te₃ thin films serve as an important material platform for the research of thin-film thermoelectric devices, and the optimization of their performances has attracted extensive attentions in the thermoelectric community. Thermal annealing is regarded as an effective strategy to simultaneously optimize hole concentration and crystalline quality, yet its optimization effect is usually unsatisfactory. To explore the underlying mechanism, p-type Bi_0.64Sb_1.36Te₃ thin films with high crystalline quality and optimized composition were fabricated via molecular beam epitaxy, and the effects of annealing on their microstructure and electrical transport properties were systematically investigated. It was found that in-situ annealing at 580 K optimizes hole density and mobility at the same time, which originates from the introduction of intrinsic Bi/SbTe' antisite defects and the improvement of thin-film crystalline quality. This indicated that the optimization of point defects and crystalline quality are crucial for enhancing films’ electrical properties via annealing. The Bi_0.64Sb_1.36Te₃ thin film annealed at 580 K for 2 h possessed a hole density of 4.05×10¹⁹ cm^-3 and achieved the best overall electrical properties among all samples. Multi-valence bands participate in electrical transport, leading to an outstanding room-temperature power factor of 5.14 mW·m^-1·K^-2 which represents one of the highest values for this thin-film material system.

Key words: Bi_2-_xSb_xTe₃ based thin film, molecular beam epitaxy, in-situ annealing, electrical transport property

中图分类号:

O465

李先达, 吴祎辰, 柳伟, 唐新峰. 原位退火提高Bi_0.64Sb_1.36Te₃外延热电薄膜的空穴浓度与电性能[J]. 无机材料学报, DOI: 10.15541/jim20260160.

LI Xianda, WU Yichen, LIU Wei, TANG Xinfeng. Improved Hole Density and Electrical Properties of Bi_0.64Sb_1.36Te₃ Epitaxial Thermoelectric Thin Films via in-situ Annealing[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20260160.

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原位退火提高Bi_0.64Sb_1.36Te₃外延热电薄膜的空穴浓度与电性能

Improved Hole Density and Electrical Properties of Bi_0.64Sb_1.36Te₃ Epitaxial Thermoelectric Thin Films via in-situ Annealing

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