Si(111)衬底上多层石墨烯薄膜的外延生长

doi:10.3724/SP.J.1077.2011.00472

无机材料学报 ›› 2011, Vol. 26 ›› Issue (5): 472-476.DOI: 10.3724/SP.J.1077.2011.00472 CSTR: 32189.14.SP.J.1077.2011.00472

Si(111)衬底上多层石墨烯薄膜的外延生长

李利民, 唐军, 康朝阳, 潘国强, 闫文盛, 韦世强, 徐彭寿

(中国科学技术大学国家同步辐射实验室, 合肥 230029)

收稿日期:2010-07-28 修回日期:2010-09-14 出版日期:2011-05-20 网络出版日期:2011-06-07
作者简介:李利民 (1986-), 男, 硕士研究生. E-mail: wolfman@mail.ustc.edu.cn
基金资助:
国家自然科学基金(50872128)

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

LI Li-Min, TANG Jun, KANG Chao-Yang, PAN Guo-Qiang, YAN Wen-Sheng, WEI Shi-Qiang, XU Peng-Shou

(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China)

Received:2010-07-28 Revised:2010-09-14 Published:2011-05-20 Online:2011-06-07
Supported by:
National Natural Sciencal Foundation of China (50872128)

摘要/Abstract

摘要： 利用固源分子束外延(SSMBE)技术, 在Si(111)衬底上沉积碳原子外延生长石墨烯薄膜, 通过反射式高能电子衍射(RHEED)、红外吸收谱(FTIR)、拉曼光谱(RAMAN)和X射线吸收精细结构谱(NEXAFS)等手段对不同衬底温度(400、600、700、800℃)生长的薄膜进行结构表征. RAMAN和NEXAFS结果表明: 在800℃下制备的薄膜具有石墨烯的特征, 而 400、600和700℃生长的样品为非晶或多晶碳薄膜. RHEED和FTIR结果表明, 沉积温度在600℃以下时C原子和衬底Si原子没有成键, 而衬底温度提升到700℃以上, 沉积的C原子会先和衬底Si原子反应形成SiC缓冲层, 且在800℃沉积时缓冲层质量较好. 因此在Si衬底上制备石墨烯薄膜需要较高的衬底温度和高质量的SiC缓冲层.

关键词: 固源分子束外延, Si(111)衬底, 石墨烯薄膜

Abstract: Graphene thin films were epitaxial grown on Si(111) substrates by depositing carbon atoms with solid source molecular beam epitaxy (SSMBE). The structural properties of the samples deposited at different substrate temperature (400, 600, 700 and 800℃) were investigated by reflection high energy electron diffraction (RHEED), Fourier transform infrared spectroscope (FTIR), Raman spectroscope (RAMAN) and near-edge X-ray absorption fine-structure (NEXAFS). RAMAN and NEXAFS results indicated that the thin film deposited at 800℃ exhibited the characteristic of graphene, while the thin films deposited at 400℃, 600℃ and 700℃ were attributed to amorphous or polycrystalline carbon thin films. RHEED and FTIR results indicated that C atoms did not bond with Si atoms at the substrate temperature below 600℃, however, above 700℃, C atoms reacted with Si atoms and formed the SiC buffer layer. Furthermore, the better quality of SiC buffer layer could be obtained at 800℃. Thus, high substrate temperature and high-quality SiC buffer layers are essential to the formation of the graphene layers on the Si substrates.

Key words: solid source molecular beam epitaxy, Si substrate, graphene thin films

中图分类号:

O484
O613

李利民, 唐军, 康朝阳, 潘国强, 闫文盛, 韦世强, 徐彭寿. Si(111)衬底上多层石墨烯薄膜的外延生长[J]. 无机材料学报, 2011, 26(5): 472-476.

LI Li-Min, TANG Jun, KANG Chao-Yang, PAN Guo-Qiang, YAN Wen-Sheng, WEI Shi-Qiang, XU Peng-Shou. Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)[J]. Journal of Inorganic Materials, 2011, 26(5): 472-476.

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Si(111)衬底上多层石墨烯薄膜的外延生长

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

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