Ce/Cr共掺杂的Bi4Ti3O12铋层状陶瓷的压电性能研究

doi:10.15541/jim20260144

无机材料学报

• •

Ce/Cr共掺杂的Bi₄Ti₃O₁₂铋层状陶瓷的压电性能研究

雷添福¹, 张龙², 陈相杰¹, 王书豪¹, 闫昌盛³, 李玲¹, 张骥¹

1.南京理工大学材料科学与工程学院, 南京 210094;
2.海军装备部驻沈阳地区军事代表局,沈阳 110000;
3.中国船舶集团有限公司第七〇三研究所,哈尔滨 150078

收稿日期:2026-04-02 修回日期:2026-05-20
通讯作者: 李玲, 副教授. E-mail: liling@njust.edu.cn; 张龙, 高级工程师 E-mail: ttggbb316@163.com
作者简介:雷添福(2001-), 男, 硕士研究生. E-mail: 2435746092@qq.com

Enhanced Piezoelectric Properties in Ce/Cr co-doped Bi₄Ti₃O₁₂ High-temperature Piezoceramics

LEI Tianfu¹, ZHANG Long², CHEN Xiangjie¹, WANG Shuhao¹, YAN Changsheng³, LI Ling¹, ZHANG Ji¹

1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
2. Military Representative Bureau of Naval Armament Department in Shenyang, Shenyang 110000, China;
3. No.703 Research Institute, China State Shipbuilding Corporation Limited, Harbin 150078, China

Received:2026-04-02 Revised:2026-05-20
Contact: LI Ling, associate professor. E-mail: liling@njust.edu.cn; ZHANG Long, senior engineer E-mail: ttggbb316@163.com.
About author:LEI Tianfu (2001-), male, Master candidate. E-mail: 2435746092@qq.com
Supported by:
National Key R&D Program of China (2024YFE0109300); National Natural Science Foundation of China (U2441267); Fundamental Research Funds for the Central Universities (30925010414)

摘要/Abstract

摘要： 铋层状压电陶瓷因其高居里温度在高温压电传感领域具有重要应用前景。纯Bi₄Ti₃O₁₂(BIT)陶瓷的压电活性较低,限制了其实际应用,本研究通过A/B位共掺杂提升BIT陶瓷的压电性能。采用传统固相反应法合成了Bi_4-_xCe_xTi_2.98Cr_0.02O₁₂ (BCTC-100x, x = 0~0.015)陶瓷,并利用X射线衍射、Rietveld精修、扫描电子显微镜、拉曼光谱、铁电分析仪及阻抗谱等手段系统表征了其晶体结构、微观形貌、铁电、介电及压电性能。结果表明,Ce/Cr共掺杂诱导了正交晶格畸变,降低了氧空位浓度,并促进了极化矢量沿a轴方向的择优取向。优化组分BCTC-1.0表现出优异的综合性能：压电常数d₃₃达19.5 pC/N,居里温度T_C为659 ℃,最大极化强度P_max为12.6 μC/cm²。尤为重要的是,该陶瓷在600 ℃退火后仍保持约84%的室温d₃₃值,展现出优异的热稳定性。本研究表明：Ce/Cr共掺杂是协同提升BIT基陶瓷压电性能与高温稳定性的有效策略,为开发高性能高温压电传感器材料提供了可行途径。

关键词: Bi₄Ti₃O₁₂, Ce/Cr共掺杂, 压电性能, 晶格畸变

Abstract: Bismuth layer-structured ferroelectrics (BLSFs) are promising candidates for high-temperature piezoelectric sensors materials due to their high Curie temperatures, which enable stable charge signal output under elevated temperature conditions. However, the low piezoelectric activity of pure Bi₄Ti₃O₁₂ (BIT) limits its practical applications. In this study, we aim to enhance the piezoelectric performance of BIT ceramics through A/B-site co-doping. A series of Bi_4-_xCe_xTi_2.98Cr_0.02O₁₂ (BCTC-100x, x = 0-0.015) ceramics were synthesized via a conventional solid-state reaction method. The microstructure and electrical properties were systematically characterized. The results demonstrate that Ce/Cr co-doping induces orthorhombic lattice distortion, reduces oxygen vacancy concentration, and promotes preferential orientation of polarization vectors along the a-axis after poling. The optimized BCTC-1.0 composition exhibits an enhanced piezoelectric constant d₃₃ of 19.5 pC/N, a high Curie temperature T_C of 659 ℃, and a maximum polarization P_max of 12.6 μC/cm². Notably, the piezoelectric constant d₃₃ retains approximately 84% of its room-temperature value after annealing at 600 ℃, demonstrating excellent thermal stability. These findings indicate that Ce/Cr co-doping is an effective strategy for synergistically enhancing the piezoelectric response and high-temperature stability of BIT-based ceramics. This work provides a feasible pathway for developing high-performance piezoelectric materials for high-temperature sensor applications.

Key words: Bi₄Ti₃O₁₂, Ce/Cr co-doping, piezoelectric properties, lattice distortion

中图分类号:

TB34

雷添福, 张龙, 陈相杰, 王书豪, 闫昌盛, 李玲, 张骥. Ce/Cr共掺杂的Bi₄Ti₃O₁₂铋层状陶瓷的压电性能研究[J]. 无机材料学报, DOI: 10.15541/jim20260144.

LEI Tianfu, ZHANG Long, CHEN Xiangjie, WANG Shuhao, YAN Changsheng, LI Ling, ZHANG Ji. Enhanced Piezoelectric Properties in Ce/Cr co-doped Bi₄Ti₃O₁₂ High-temperature Piezoceramics[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20260144.

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Ce/Cr共掺杂的Bi₄Ti₃O₁₂铋层状陶瓷的压电性能研究

Enhanced Piezoelectric Properties in Ce/Cr co-doped Bi₄Ti₃O₁₂ High-temperature Piezoceramics

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