BiAlO3掺杂PZT陶瓷的高压电性能和低电场应变滞后

doi:10.15541/jim20220162

无机材料学报 ›› 2022, Vol. 37 ›› Issue (12): 1365-1370.DOI: 10.15541/jim20220162

• 研究快报 • 上一篇

BiAlO₃掺杂PZT陶瓷的高压电性能和低电场应变滞后

刘鼎伟¹^,²(), 曾江涛¹, 郑嘹赢¹, 满振勇¹, 阮学政¹, 时雪¹, 李国荣¹()

1.中国科学院上海硅酸盐研究所, 无机功能材料与器件重点实验室, 上海 200050
2.中国科学院大学材料科学与光电子工程中心, 北京 100049

收稿日期:2022-03-22 修回日期:2022-07-06 出版日期:2022-12-20 网络出版日期:2022-08-26
通讯作者: 李国荣, 研究员. E-mail: grli@mail.sic.ac.cn
作者简介:刘鼎伟(1998-), 男, 硕士研究生. E-mail: liudingwei@student.sic.ac.cn

High Piezoelectric Property and Low Electric Field-strain Hysteresis of BiAlO₃-doped PZT Ceramics

LIU Dingwei¹^,²(), ZENG Jiangtao¹, ZHENG Liaoying¹, MAN Zhenyong¹, RUAN Xuezheng¹, SHI Xue¹, LI Guorong¹()

1. Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2022-03-22 Revised:2022-07-06 Published:2022-12-20 Online:2022-08-26
Contact: LI Guorong, professor. E-mail: grli@mail.sic.ac.cn
About author:LIU Dingwei (1998-), male, Master candidate. E-mail: liudingwei@student.sic.ac.cn
Supported by:
National Natural Science Foundation of China(51831010);National Key R&D Program(2021YFA0716502);National Key R&D Program(2021YFB3800604)

摘要/Abstract

摘要：

铅基压电陶瓷因其优异的压电性能, 被广泛应用于压电器件。其中, 压电驱动器要求压电陶瓷具有较高压电性能并且在电场下具有较高的电致应变和较小的应变滞后。本研究通过施主-受主共掺, 得到高压电性能和低电场应变滞后的PZT陶瓷。采用传统固相反应法制备了(1-x)(Pb_0.95Sr_0.05)(Zr₅₃Ti₄₇)O₃-xBiAlO₃+0.2%MnO₂陶瓷(掺杂量为质量百分数), 并对其微观结构和压电性能进行了研究。结果表明：BiAlO₃掺杂量较少时, 陶瓷中缺陷偶极子的“钉扎”效应使得陶瓷畴壁转动困难, 陶瓷压电性能较弱, 应变滞后也较小。随BiAlO₃掺杂量增加, 缺陷偶极子“钉扎”效应减弱, 陶瓷的压电性能和应变滞后随之提高。本实验得到的性能最优组分为x=1.75%, 该组份陶瓷的压电系数d₃₃=504 pC/N, 机电耦合系数k_p=0.71, 机械品质因数Q_m=281, 居里温度T_C=312 ℃, 在10 kV/cm电场下的应变滞后仅为15%, 并且还具有较好的温度稳定性, 是一种具有应用价值的压电驱动器用压电陶瓷材料。

关键词: 压电性能, 低应变滞后, 温度稳定性, PZT, BiAlO₃掺杂

Abstract:

Lead-based piezoelectric ceramics are widely used in piezoelectric devices due to their excellent piezoelectric properties. Piezoelectric actuators require piezoelectric ceramics with high piezoelectric properties and high precision displacement as well as small strain hysteresis under applied electric fields, which can be obtained by donor-acceptor co-doping. In this work, (1-x)(Pb_0.95Sr_0.05)(Zr₅₃Ti₄₇)O₃-xBiAlO₃ + 0.2%MnO₂ ceramics were prepared by a traditional solid-state reaction method (doping amount in mass percentage). The microstructure and piezoelectric properties of the prepared ceramics were investigated. The results demonstrated that the defect dipole can hinder the domain rotation in a few additions of BiAlO₃, resulting in a relatively low piezoelectric property and low strain hysteresis under electric fields. With more BiAlO₃ addition, the piezoelectric properties and strain hysteresis of the ceramics are improved because the pinning effect to the domain rotation become weak. The optimal performance is obtained at x=1.75%, where the piezoelectric coefficient (d₃₃), electromechanical coupling coefficient (k_p), mechanical quality factor (Q_m) and Curie temperature (T_C) are 504 pC/N, 0.71, 281 and 312 ℃, respectively. This piezoelectric ceramic show a relative high strain and low strain hysteresis (only 15%) under the electric field of 10 kV/cm. Due to the high piezoelectric performance and low electric field strain hysteresis along with the good temperature stability, the (1-x)(Pb_0.95Sr_0.05)(Zr₅₃Ti₄₇)O₃-xBiAlO₃ + 0.2%MnO₂ ceramics can be a kind of piezoelectric ceramic with practical application potentials for the piezoelectric actuators.

Key words: piezoelectric properties, low strain hysteresis, temperature stability, PZT, BiAlO₃ doping

中图分类号:

TQ174

刘鼎伟, 曾江涛, 郑嘹赢, 满振勇, 阮学政, 时雪, 李国荣. BiAlO₃掺杂PZT陶瓷的高压电性能和低电场应变滞后[J]. 无机材料学报, 2022, 37(12): 1365-1370.

LIU Dingwei, ZENG Jiangtao, ZHENG Liaoying, MAN Zhenyong, RUAN Xuezheng, SHI Xue, LI Guorong. High Piezoelectric Property and Low Electric Field-strain Hysteresis of BiAlO₃-doped PZT Ceramics[J]. Journal of Inorganic Materials, 2022, 37(12): 1365-1370.

图/表 7

Fig. 1 XRD patterns of (1-x)PSZT-xBA-0.2Mn ceramics (a) 20°-80°; (b) Near (200) peak

Fig. 2 SEM images for surface microstructures of (1-x)PSZT-xBA-0.2Mn ceramics

Fig. 3 Temperature dependent dielectric constant (εr) and dielectric loss (tanδ) of (1-x)PSZT-xBA-0.2Mn (x=0.75%, 1.25%, 1.75%, and 2.25%, in mol fraction) at different frequencies

Fig. 4 Ferroelectric properties of the (1-x)PSZT-xBA-0.2Mn ceramics (x=0.50%, 0.75%, 1.00%, 1.25%, 1.50%, 1.75%, 2.00%, and 2.25%, in mol fraction) (a) Polarization-electric field (P-E) hysteresis loops; (b) Current-electric field (I-E) loops; (c) Strain-electric field (S-E) loops (40kV/cm, 10Hz)

表1 各组分陶瓷性能参数

Table 1 Performance parameters of different component ceramics

(1-x)PSZT-xBA-0.2Mn/ (%, in mol fraction)	Average strain size/μm	d₃₃/(pC·N^-1)	k_p	Q_m	T_C/℃	ε	tanδ/%	$d 33 *$ /(pC·N^-1)	H/%
0.50	1.6	333	0.68	992	329	1290	0.22	380	10
0.75	1.9	367	0.69	1131	324	1300	0.27	398	8
1.00	2.5	383	0.70	827	318	1293	0.32	407	3
1.25	3.0	402	0.73	853	316	1420	0.30	540	12
1.50	4.5	460	0.72	445	311	1416	0.32	538	12
1.75	6.3	504	0.71	281	312	1470	0.27	699	15
2.00	6.7	532	0.73	130	310	1690	0.66	638	13
2.25	6.2	501	0.69	113	312	1669	1.01	710	17

表1 各组分陶瓷性能参数

Table 1 Performance parameters of different component ceramics

(1-x)PSZT-xBA-0.2Mn/ (%, in mol fraction)	Average strain size/μm	d₃₃/(pC·N^-1)	k_p	Q_m	T_C/℃	ε	tanδ/%	$d 33 *$ /(pC·N^-1)	H/%
0.50	1.6	333	0.68	992	329	1290	0.22	380	10
0.75	1.9	367	0.69	1131	324	1300	0.27	398	8
1.00	2.5	383	0.70	827	318	1293	0.32	407	3
1.25	3.0	402	0.73	853	316	1420	0.30	540	12
1.50	4.5	460	0.72	445	311	1416	0.32	538	12
1.75	6.3	504	0.71	281	312	1470	0.27	699	15
2.00	6.7	532	0.73	130	310	1690	0.66	638	13
2.25	6.2	501	0.69	113	312	1669	1.01	710	17

Fig. 5 Unipolar strains-electric (S-E) fields of (1-x)PSZT- xBA-0.2Mn (x=0.50%-2.25%)

Fig. 6 Unipolar strains-electric (S-E) fields of (1-x)PSZT- xBA-0.2Mn ceramics (x=1.75%) (30kV/cm, 10Hz)

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BiAlO₃掺杂PZT陶瓷的高压电性能和低电场应变滞后

High Piezoelectric Property and Low Electric Field-strain Hysteresis of BiAlO₃-doped PZT Ceramics

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