[1] COLINA M, MOLPECERES C, MORALES M, et al. Laser ablation modelling of aluminium, silver and crystalline silicon for applications in photovoltaic technologies. Surface Engineering, 2011, 27(6): 414–423.
[2] GIRGINOUDI D, TSIARAPAS C, GEORGOULAS N. Properties of a-Si: H films deposited by RF magnetron sputtering at 95 ?C. Applied Surface Science, 2011, 257(9): 3898–3903.
[3] PLENTZ J, ANDR? G, GAWLIK A, et al. Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540 mV open circuit voltage. Thin Solid Films, 2014, 562: 430–434.
[4] KOGA K, MATSUNAGA T, NAKAMURA W M, et al. Comparison between silicon thin films with and without incorporating crystalline silicon nano-particles into the film. Thin Solid Films, 2011, 519: 6896–6898.
[5] SHENG S, LIAO X, KONG G. Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation. Applied Physics Letters., 2001, 78: 2509–2511.
[6] QIN Y, FENG T, LI Z Q, et al. Structural, optical and electrical properties of amorphous silicon thin films prepared by sputtering with different targets. Applied Surface Science, 2011, 257: 7993–7996.
[7] ZHANG LI-WEI, ZHOU LING-LI, LI RUI, et al. Fabrication of polycrystalline silicon films with columnar grains structure on quartz. Journal of Inorganic Materials, 2008, 23(2): 369–372.
[8] MATSUDA A. Growth mechanism of microcrystalline silicon obtained from reactive plasmas. Thin Solid Films, 1999, 337: 1–6.
[9] NOZAWA R, TAKEDA H, ITO M, et al. In situ?observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing. Journal of Applied Physics, 1999, 85: 1172–1177.
[10] WESTRAA J M, VAVRUNKOVA V, ?UTTA P, et al. Formation of thin-film crystalline silicon on glass observed by in situ XRD. Energy Procedia, 2010, 2: 235–241.
[11] QIU Y, KUNZ O, FEJFAR A, et al. On the effects of hydrogenation of thin film polycrystalline silicon: a key factor to improve hetero junction solar cells. Solar Energy Materials and Solar Cells, 2014, 122(0): 31–39.
[12] CHAKRABORTY M, BANERJEE A, DAS D. Spectroscopic studies on nanocrystalline silicon thin films prepared from H2-diluted SiH4-plasma in inductively coupled low pressure RF PECVD. Physica E, 2014, 61: 95–100.
[13] ZHANG YI-KE, HAO HUI-LIAN, WU ZHAO-KUN, et al. Effect of the hydrogen dilution on the film structure and photoluminescence of nc-Si: H thin films. Micronanoelectronic Technology, 2014, 51(11): 717–723.
[14] VYGRANENKO Y, FATHI E, SAZONOV A, et al. Nanocrystalline p-layer for a-Si: H p-i-n solar cells and photodiodes. Solar Energy Materials and Solar Cells, 2010, 94: 1860–1863.
[15] YUE G, YAN B, GANGULY G, et al. Record of the 4th World Conference on Photovoltaic Energy Conversion. Hawaii, USA, May 2006: 1588.
[16] ALFORD T L, SHETTY P K, THEODORE N D, et al. Nano-crystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates. Thin Solid Films, 2008, 516(12): 3940–3947.
[17] CHEN YONG-SHENG, CHEN XI-PING, HAO XIU-LI, et al. The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method. Applied Surface Science, 2013, 270: 737–740.
[18] BRYAN D V, BARRY O B, DAVID R A, et. al. Distribution of hydrogen in low temperature passivated amorphous silicon (a-Si: H) films from neutron reflectivity. Journal of non-crystalline solids, 2011, 357: 1114–1117.