无机材料学报 ›› 2020, Vol. 35 ›› Issue (9): 987-992.DOI: 10.15541/jim20190516

所属专题: 能源材料论文精选(四):光催化与电催化(2020)

• 研究论文 • 上一篇    下一篇

双铁电复合材料的制备及其光电化学性能研究

张亚萍1(),雷宇轩1,丁文明2,于濂清2(),朱帅霏1   

  1. 1.中国石油大学(华东)1. 理学院
    2.材料科学与工程学院, 青岛 266580
  • 收稿日期:2019-10-11 修回日期:2020-01-11 出版日期:2020-09-20 网络出版日期:2020-01-20
  • 作者简介:张亚萍(1967-), 女, 博士, 副教授. E-mail: zhangyp@upc.edu.cn
    ZHANG Yaping(1967-), female, PhD, associate professor. E-mail:zhangyp@upc.edu.cn
  • 基金资助:
    国家自然科学基金(21476262);青岛市科技发展计划(14-2-4-108-jch)

Preparation and Photoelectrochemical Property of the Dual-ferroelectric Composited Material

ZHANG Yaping1(),LEI Yuxuan1,DING Wenming2,YU Lianqing2(),ZHU Shuaifei1   

  1. 1. College of Science, China University of Petroleum, Qingdao 266580, China
    2. College of Material Science and Engineering, China University of Petroleum, Qingdao 266580, China
  • Received:2019-10-11 Revised:2020-01-11 Published:2020-09-20 Online:2020-01-20
  • Supported by:
    National Natural Science Foundation of China(21476262);Technology Project of Qingdao(14-2-4-108-jch)

摘要:

通过模板法制备钒酸铋(BiVO4)薄膜, 用溶胶-凝胶法制备铁电材料铁酸铋(BiFeO3)并对BiVO4进行修饰, 以半导体复合的方式提高BiVO4的光电化学性能。电化学测试结果表明, 经BiFeO3修饰后, BiVO4薄膜的光电化学性能有所提高, 其中经BiFeO3旋涂5次后的BiVO4薄膜具有最优的光电化学性能, 光电流密度达到0.72 mA·cm-2, 较未修饰样品提高了67.4%。利用外场极化调节能带弯曲可以显著地提高BiVO4/nBiFeO3铁电复合物的光电化学性能, 复合物经正极化20 V电压处理后的光电流密度最高为0.91 mA·cm-2, 比BiVO4薄膜提升了1倍以上, 具有良好的光电化学性能。BiFeO3与BiVO4复合后有利于形成异质结, 促进光生电子、光生空穴的产生与分离, 并且外场极化调节能带弯曲使光生电荷加速转移, 是铁电复合物光电化学性能提高的主要原因。

关键词: BiVO4, BiFeO3, 铁电复合材料, 光电化学性能

Abstract:

BiVO4 film was synthesized via template method, the ferroelectric material BiFeO3 was prepared by Sol-Gel method to modify BiVO4. By means of dual-ferroelectric semiconductor composition, the photochemical properties of BiVO4 was greatly improved. The electrochemical test results show that the superior photoelectrochemical properties of BiVO4 film are achieved after spin-coating with BiFeO3 for 5 times. It owns an optimal photocurrent density of 0.72 mA·cm-2, which is 67.4% higher than that of pure BiVO4. The energy band bending regulation via electric field polarization could further boost the photoelectrochemical property of BiVO4/nBiFeO3 ferroelectric composite. The highest photocurrent density of the composite after polarization at 20 V reaches 0.91 mA·cm-2, which is more than twice of pure BiVO4 film. The combination of BiFeO3 and BiVO4 is favorable for forming heterojuncting, generating and separating of photogenic electrons and holes. The electric field polarization regulating band bending accelerates the photogenic charge transfer, which is the main reason for the improved photoelectrochemical properties of ferroelectric composite.

Key words: BiVO4, BiFeO3, ferroelectric composite material, photoelectrochemical property

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