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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

石英衬底上柱状多晶硅薄膜的制备

张丽伟1,2, 周伶俐2, 李 瑞3, 李红菊1, 卢景霄1   

  1. 1. 郑州大学 教育部材料物理重点实验室, 郑州 450052; 2. 新乡学院, 新乡 453000; 3. 河南工业大学, 郑州 450001
  • 收稿日期:2007-02-02 修回日期:2007-06-07 出版日期:2008-03-20 网络出版日期:2008-03-20

Fabrication of Polycrystalline Silicon Films with Columnar Grains Structure on Quartz

ZHANG Li-Wei1,2, ZHOU Ling-Li2, LI Rui3, LI Hong-Ju1, LU Jing-Xiao1   

  1. 1. Key laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China; 2 Xinxiang University, Xinxiang 453000, China; 3 Henan University of Technology, Zhengzhou 450001, China
  • Received:2007-02-02 Revised:2007-06-07 Published:2008-03-20 Online:2008-03-20

PDF (PC)

1699

被引次数

17 | 1

摘要： 利用射频等离子体增强化学气相沉积法(RF-PECVD)在已经预沉积有非晶硅薄膜的石英衬底上低温沉积了N/I非晶硅薄膜, 对样品进行了两步快速光热(RTP)退火. 采用 Raman、X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试仪器对样品退火前后的结晶状况和微观形貌进行了分析. 结果表明, 该N/I非晶硅薄膜退火后的晶化率达到了94%左右, 断面形貌为柱状结构, 样品中的平均晶粒尺寸约30nm, 晶粒团簇的尺寸最大约1.5μm.

关键词: 快速光热退火, 柱状结晶, 多晶硅薄膜, 多晶硅薄膜太阳电池

Abstract: N/I silicon thin films were deposited on amorphous silicon thin film coated quartz substrate by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)system at low temperature, and subsequently annealed by two-step rapid thermal processing (RTP). Through Raman scattering, X-Ray diffraction (XRD), scanning electron microscope(SEM) and transmittance electron microscope (TEM) measurement, the crystallization and morphologies of the sample were investigated. The results show that the crystallinity of the N/I silicon thin films reaches about 94% after being annealed. The cross sectional morphology of the N/I silicon thin films is of columnar grains and the average grain size of the sample is about 30nm while the biggest grain cluster is about 1.5μm in landscape orientation.

Key words: rapid thermal annealing, columnar grain, poly-Si thin film, poly-Si thin film solar cells

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