无机材料学报 ›› 2019, Vol. 34 ›› Issue (9): 997-1003.DOI: 10.15541/jim20180550

• 研究论文 • 上一篇    下一篇

Ce 3+掺杂Na0.5Bi8.5Ti7O27铋层状陶瓷的结构与电性能研究

胡浩,江向平(),陈超,聂鑫,黄枭坤,苏春阳   

  1. 景德镇陶瓷大学 材料科学与工程学院, 江西省先进陶瓷材料重点实验室, 景德镇 333001
  • 收稿日期:2018-11-26 修回日期:2019-01-16 出版日期:2019-09-20 发布日期:2019-05-29
  • 作者简介:胡 浩(1992-), 男, 硕士研究生. E-mail: 1980988765@qq.com
  • 基金资助:
    国家自然科学基金(51562014);国家自然科学基金(51602135);国家自然科学基金(51862016);国家自然科学基金(51762024);江西省自然科学基金(20171BAB216012);江西省教育厅科技项目(GJJ170789);江西省教育厅科技项目(GJJ170794);江西省教育厅科技项目(GJJ170804)

Influence of Ce 3+ Substitution on the Structure and Electrical Characteristics of Bismuth-layer Na0.5Bi8.5Ti7O27 Ceramics

HU Hao,JIANG Xiang-Ping(),CHEN Chao,NIE Xin,HUANG Xiao-Kun,SU Chun-Yang   

  1. Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China
  • Received:2018-11-26 Revised:2019-01-16 Online:2019-09-20 Published:2019-05-29
  • Supported by:
    National Natural Science Foundation of China(51562014);National Natural Science Foundation of China(51602135);National Natural Science Foundation of China(51862016);National Natural Science Foundation of China(51762024);Natural Science Foundation of Jiangxi Province(20171BAB216012);Foundation of Jiangxi Provincial Education Department(GJJ170789);Foundation of Jiangxi Provincial Education Department(GJJ170794);Foundation of Jiangxi Provincial Education Department(GJJ170804)

摘要:

采用固相法制备了Ce 3+掺杂的Na0.5Bi8.5-xCexTi7O27(NBT-BIT-xCe, 0≤x≤0.1)共生铋层状无铅压电陶瓷, 研究了NBT-BIT-xCe陶瓷的结构和电学性能。研究结果表明所有陶瓷样品均为单一的铋层状结构, 随Ce 3+掺杂量的增加, 样品的畸变程度呈现上升趋势, 同时陶瓷晶粒的平均尺寸不断减小, 介温谱和差热分析结果表明样品的介电双峰均对应于陶瓷内部结构的铁电相变。Ce 3+掺杂可以显著减少陶瓷内部的氧空位浓度以及降低陶瓷的介电损耗, 提升陶瓷的压电常数(d33), 当x=0.06时, 陶瓷的综合电性能最佳: 压电常数(d33)达到27.5 pC/N, 居里温度(TC)达到658.2 ℃, 介电损耗(tanδ)为0.39%。

关键词: 压电陶瓷, Na0.5Bi8.5Ti7O27, 氧空位, 激活能

Abstract:

The structure and electrical properties of Ce 3+-doped intergrowth bismuth layer-structured piezoelectric ceramics Na0.5Bi8.5-xCexTi7O27 (NBT-BIT-xCe, 0≤x≤0.1) prepared by conventional solid-state reaction process were systematically studied. In this study, all the ceramic samples were found to possess a single bismuth layer structure, and with the increase of x content, there is an increasing trend towards the lattice distortion of the sample, while the average grain size decreased. As demonstrated by dielectric spectrum and DSC method, two dielectric anomalies of the samples occur, which corresponds to ferroelectric phase transitions of the ceramics. And Ce 3+doping significantly reduces concentration of oxygen vacancy and dielectric loss in materials, improving piezoelectric constant (d33) of ceramic samples. The resultant ceramics with x=0.06 reached the optimal performance, possessing a d33 up to 27.5 pC/N with the Curie temperature of 658.2 ℃ and tanδ=0.39%.

Key words: piezoelectric ceramics, Na0.5Bi8.5Ti7O27, oxygen vacancy, activation energy

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