Journal of Inorganic Materials

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Dielectric Properties of BSTO/Mg2SiO4/MgO Ceramic Composites

CHEN Ying; DONG Xian-Lin; GAO Min; LIANG Rui-Hong; CAO Fei   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2004-07-06 Revised:2004-08-12 Published:2005-07-20 Online:2005-07-20

Abstract: BSTO/Mg2SiO4/MgO ceramic composites were fabricated by conventional ceramic processing. The microstructures and dielectric properties of the samples were measured and investigated
systemically. The effects of the doping of Mg2SiO4/MgO on the microstructures and dielectric properties of BSTO/Mg2SiO4/MgO ceramic composites were investigated. The results show
that compared with the other BSTO ceramic composites, BSTO/Mg2SiO4/MgO ceramic composites not only can be sintered at a lower temperature but also keep a higher tunability while the dielectric
constant decreases. The typical composition of BSTO/39wt/% Mg2SiO4/17wt% MgO has a dielectric constant of ~80.21, a dielectric loss of ~0.003 and a tunability of ~12% under applying 2kV/mm dc bias field.

Key words: Ba1-xSrxTiO3 (BSTO), ceramic composites, dielectric properties, tunability

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