Abstract: Nitrogen-doped p-type zinc oxide (ZnO) thin films were deposited on glass substrates by metalorganic chemical vapor deposition (MOCVD). The p-type ZnO, with the lowest resistivity of 5.52Ω·cm and the highest hole concentration of 2.17×10¹⁸cm^-3, can be achieved at the NO and N₂0 flow rates of 40 and 25sccm, respectively, and the sample was most stable. Four months later, all samples still showed p-type conduction, but the resistivities were increased.

Key words: p-type ZnO, electronic properties, MOCVD