Growth Mechanism for N-doped ZnO Films Grown by Spray Pyrolysis Method

Abstract

Abstract: N-doped ZnO films were grown at Si(100) substrates by ultrasonic spray pyrolysis with the precursor of zinc acetate and ammonium acetate. Thermal-mass spectrometric analysis (TG-DSC-MS),
X-ray diffraction (XRD), and field emission scanning electron microscope (FESEM) were employed to analyze the growth mechanism, crystal structure and
electrical properties of films. Results show that the films grown at different substrate temperatures show different growth mechanisms, which could influence
crystal structure and electrical properties of films. The successful p-type doping can be realized at an optimized substrate temperature. The p-type ZnO
film shows excellent electrical properties such as a hole concentration of 3.70×10¹⁸cm^-3, hole mobility of 110cm²·^-1s^-1
and resistivity of 1.4×10^-2Ω·cm.

Key words: p-type ZnO film, spray pyrolysis, dope, growth mechanism

CLC Number:

O482

ZHAO Jun-Liang,LI Xiao-Min,BIAN Ji-Ming,ZHANG Can-Yun,YU Wei-Dong,GAO Xiang-Dong. Growth Mechanism for N-doped ZnO Films Grown by Spray Pyrolysis Method[J]. Journal of Inorganic Materials.

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Growth Mechanism for N-doped ZnO Films Grown by Spray Pyrolysis Method

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