Abstract: CdTe and Te-doped CdTe thin films were prepared by close-spaced-sublimation(CSS) technique. The composition, structure, surface and electrical properties of the
films were studied by using XRF,XRD, SEM and HALL. The results show that the films deposited by CSS have good crystallization. Crystalline grain is 100 times bigger
than that of the films deposited by RF method. Te doping changes the crystal characteristic of CdTe films. The proper Te doping can improve lattice growing
of CdTe films, and cause lattice constant increasing. The films’ resistivity decreases while mobility and carrier concentration increase, which indicates
electrical conductivity of Te doped CdTe increases greatly.

Key words: close-spaced-sublimation（CSS） technique, CdTe thin films