Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films

CHEN Zhu1,2, ZHANG Shu-Ren2, DU Shan-Yi3, YANG Cheng-Tao2, ZENG Ze-Yu2, LI Bo2, SUN Ming-Xia2   

  1. 1. Department of Telecommunication Engineering, Chengdu University of Information Technology, Chengdu 610225, China;
    2. School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    3. Center for Composite Materials. Harbin Institute of Technology, Harbin 150001, China
  • Received:2005-08-01 Revised:2005-09-15 Published:2006-07-20 Online:2006-07-20

Abstract: We successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10~15mm in depth by solid-state reactions. The paper studied the influence of different concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the IR( insulative resistivity ) and tgδ(dielectric loss), the optimum concentration of Li2CO3 doped in ZnO ceramic target was obtained(2.2%mol ratio). And the optimum process for preparing ZnO-Li2.2% ceramic target was also realized through the investigation of physics and electrics of ZnO ceramic under the different sintering temperatures and molding pressure treatments. By using Li2.2%-doped ZnO ceramic as the target, the ZnO films with highly c-axis (002) preferred orientation were grown by RF magnetron sputtering on Si(100), glass and Pt(111)/Ti/SiO2/Si(100) substrates respectively.

Key words: ceramic target, zinc oxide films, RF magnetron sputtering, preferred orientation

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