Journal of Inorganic Materials ›› 2025, Vol. 40 ›› Issue (5): 536-544.DOI: 10.15541/jim20240494

• RESEARCH ARTICLE • Previous Articles     Next Articles

Low-temperature Sintering of LiBxAl1-xSi2O6 Microwave Dielectric Ceramics with Ultra-low Permittivity

XIONG Siyu1(), MO Chen1, ZHU Xiaowei1, ZHU Guobin1, CHEN Deqin1, LIU Laijun1, SHI Xiaodong2, LI Chunchun1()   

  1. 1. College of Material Science and Engineering, Guilin University of Technology, Guilin 541004, China
    2. College of Physics and Electrical Information Engineering, Guilin University of Technology, Guilin 541004, China
  • Received:2024-11-27 Revised:2024-12-19 Published:2025-05-20 Online:2025-01-09
  • Contact: LI Chunchun, associate professor. E-mail: lichunchun2003@126.com
  • About author:XIONG Siyu (2000-), female, Master candidate. E-mail: xiongsiyu0927@163.com
  • Supported by:
    National Natural Science Foundation of China(62061011)

Abstract:

The lithium-based silicate microwave dielectric ceramics with ultra-low permittivity show great potential as substrate materials in the fifth-generation wireless communication technology. However, the residual stress caused by higher sintering temperatures leads to increased dielectric loss, thereby deteriorating the microwave dielectric performance. In this work, B3+ was introduced into LiAlSi2O6 ceramics to reduce Al3+ content, aiming to improve their sintering temperature and microwave dielectric performance. LiBxAl1-xSi2O6 (0≤x≤0.20) microwave dielectric ceramics were prepared using a combination of solid-state reaction and cold isostatic pressing techniques. Effects of B3+ doping on the sintering characteristics, phase structure, microstructure, and microwave dielectric properties of the materials were characterized. The results show that with a gradual increase in the doping concentration, sintering temperature of the ceramics decreases significantly from 1400 to 1000 ℃. Meanwhile, the relative permittivity (εr) decreases from 3.95 to 3.69, the quality factor (Q×f) increases significantly from 24300 to 30560 GHz, and the temperature coefficient of resonant frequency (τf) increases from -45.9×10-6 to -20.9×10-6-1. Specifically, the change in εr is mainly influenced by intrinsic polarization, lattice vibrations, and covalent bond strength of the material; the improvement in Q×f is closely related to the increase in packing fraction (PF) and the decrease in damping coefficient; the increase in τf is strongly correlated with the bond valence of oxygen (VO). Furthermore, the composition with x = 0.20 exhibits the best microwave dielectric performance with εr = 3.69, Q×f = 30560 GHz, and τf = -20.9×10-6-1. Findings of this study on LiBxAl1-xSi2O6 provide important theoretical guidance and practical insights for development and application of high-performance microwave dielectric ceramics in the future.

Key words: ultra-low permittivity, lithium aluminum silicate, microwave dielectric property

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