Preparation of Y2O3 Coating by Suspension Plasma Spraying and Its Resistance to Plasma Etching

doi:10.15541/jim20230548

Abstract

Abstract:

With the fierce competition of high-end chips, Y₂O₃coating is an important component of plasma etching cavity, corresponding research gradually becomes a research hotspot. Y₂O₃ coating was prepared on aluminum alloy surface by suspension plasma spraying (SPS). The effects of different process parameters on the phase composition, mechanical properties, microstructure, and dielectric strength of the coating were studied. The effect of microscopic porosity of Y₂O₃ coating on etching rate was analyzed after etching in CF₄/Ar/O₂ mixture for 30, 60 and 120 min, respectively. The microhardness, the porosity, the bonding strength, and the dielectric strength of Y₂O₃ coating prepared by the optimal process 1 (spraying distance 80 mm, liquid feed rate 35 mL/min, atomizing gas flow rate 15 L/min, horizontal gun moving speed 700 mm/s, vertical moving step 1 mm/step) is (3.78±0.36) GPa, (2.35±0.24)%, (36.0±3.6) MPa, and (29.74±2.01) kV/mm, respectively. In the mixed plasma gas composed of CF₄/Ar/O₂, the Y₂O₃ coating undergoes physical and chemical reactions, while Ar⁺ strongly shocks and bombards the coating to break the chemical bond on the surface. CF₂* and F* make Y₂O₃ continuously etched to form YF₃ attaching to the coating surface. At the same time, the physical impact of Ar⁺ constantly acts on the surface of the coating, removing the YF₃ layer, and a small amount of residual YF₃ on the surface of the coating is oxidized and finally forms YOF, resulting in a coating etching rate as low as (11.48±5.21) nm/min. Y₂O₃ coating with high density, low porosity and high uniformity can effectively improve the resistance of parts to plasma etching, which is of great significance in semiconductor industry.

Key words: suspension plasma spraying, Y₂O₃ coating, porosity, plasma etching resistance

CLC Number:

TQ174

MA Wen, SHEN Zhe, LIU Qi, GAO Yuanming, BAI Yu, LI Rongxing. Preparation of Y₂O₃ Coating by Suspension Plasma Spraying and Its Resistance to Plasma Etching[J]. Journal of Inorganic Materials, 2024, 39(8): 929-936.

Figures/Tables 10

Table 1 Fixed process parameters for preparing Y2O3 coating

Process parameter	Value
Gas volume ratio (Ar : N₂ : H₂)	6 : 3 : 1
Total gas flow/slpm	180
Arc current/A	220
Atomization gas flow rate/(L·min^-1)	15
Horizontal moving speed of spray gun/(mm·s^-1)	700

Table 2 Preparation process parameters of Y2O3 coating

Process	Spray distance/mm	Suspention injection rate/(mL·min^-1)	Vertical moving step/(mm·step^-1)
1	80	35	1.0
2	80	45	1.5
3	90	35	1.5
4	90	45	1.0

Fig. 1 XRD patterns of Y2O3 raw power and its coatings prepared by four processes

Fig. 2 Cross-sectional microstructures of the Y2O3 coatings prepared by four processes (a) Process 1; (b) Process 2; (c) Process 3; (d) Process 4

Fig. 3 Bonding strength and microhardness of the Y2O3 coatings prepared by four processes

Fig. 4 Porosities and dielectric strengths of the Y2O3 coatings prepared by four processes

Fig. 5 Surface microstructures of the Y2O3 coatings prepared by four processes after etching for 0, 30, 60 and 120 min

Fig. 6 Porosities and etching rates of the Y2O3 coatings prepared by four processes

Fig. 7 XRD patterns of the Y2O3 coatings prepared by four processes after etching for 120 min

Fig. 8 EDS analyses of the Y2O3 coatings prepared by four processes and etched for 120 min (a) Process 1; (b) Process 2; (c) Process 3; (d) Process 4

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Preparation of Y₂O₃ Coating by Suspension Plasma Spraying and Its Resistance to Plasma Etching

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