Journal of Inorganic Materials ›› 2024, Vol. 39 ›› Issue (8): 920-928.DOI: 10.15541/jim20240002
• RESEARCH ARTICLE • Previous Articles Next Articles
					
													QUAN Wenxin(
), YU Yiping, FANG Bing, LI Wei, WANG Song(
)
												  
						
						
						
					
				
Received:2024-01-02
															
							
																	Revised:2024-03-13
															
							
															
							
																	Published:2024-08-20
															
							
																	Online:2024-03-30
															
						Contact:
								WANG Song, professor. E-mail: wangs0731@163.comAbout author:QUAN Wenxin (2000-), male, Master candidate. E-mail: quanwenxin18@nudt.edu.cn				
													Supported by:CLC Number:
QUAN Wenxin, YU Yiping, FANG Bing, LI Wei, WANG Song. Oxidation Behavior and Meso-macro Model of Tubular C/SiC Composites in High-temperature Environment[J]. Journal of Inorganic Materials, 2024, 39(8): 920-928.
																													Fig. 6 Mass retention rate (a), function fitting of $ \left(1-\eta_{\mathrm{m}}\right)^{2}$ with t (b), strength retention rate (c), and function fitting of $ \left(1-\eta_{\mathrm{R}}\right)^{2}$ with t (d) for tubular C/SiC composites after high-temperature air oxidation
																													Fig. 11 EDS distributions of oxygen contents at cross sections of tubular C/SiC composites after 1100 ℃-1 h (a), 1300 ℃-0.5 h (b) and 1300 ℃-1 h (c) high-temperature air oxidation
| Parameter | 900 ℃ | 1000 ℃ | 1100 ℃ | 1200 ℃ | 1300 ℃ | 
|---|---|---|---|---|---|
| B/(nm2∙min-1) | 1.05 | 10.29 | 39.48 | 84.84 | 163.17 | 
Table 1 Parabolic rate constant of SiC in air oxidation
| Parameter | 900 ℃ | 1000 ℃ | 1100 ℃ | 1200 ℃ | 1300 ℃ | 
|---|---|---|---|---|---|
| B/(nm2∙min-1) | 1.05 | 10.29 | 39.48 | 84.84 | 163.17 | 
| Parameter | 900 ℃ | 1100 ℃ | 1300 ℃ | 
|---|---|---|---|
| 3.18×10-5 | 3.53×10-5 | 3.86×10-5 | |
| B/(nm2∙s-1) | 0.0175 | 0.658 | 2.720 | 
| Z/μm | 0.0251 | 0.1539 | 0.3129 | 
| e/μm | 1.980 | 1.835 | 1.658 | 
| 1.937×10-2 | 1.128×10-2 | 2.880×10-1 | 
Table 2 Parameters of oxidation for 10 h
| Parameter | 900 ℃ | 1100 ℃ | 1300 ℃ | 
|---|---|---|---|
| 3.18×10-5 | 3.53×10-5 | 3.86×10-5 | |
| B/(nm2∙s-1) | 0.0175 | 0.658 | 2.720 | 
| Z/μm | 0.0251 | 0.1539 | 0.3129 | 
| e/μm | 1.980 | 1.835 | 1.658 | 
| 1.937×10-2 | 1.128×10-2 | 2.880×10-1 | 
																													Fig. 12 Distributions of mole fraction of oxygen (a), gradient of mole fraction (b) and mole fraction with diffusion progress (c) in microcracks of SiC matrix
| Modifying factor | 900 ℃ | 1100 ℃ | 1300 ℃ | 
|---|---|---|---|
| 1.2×10-5 | 3.1×10-5 | 6.0×10-5 | 
Table 3 Modifying factor of equivalent oxidation depth
| Modifying factor | 900 ℃ | 1100 ℃ | 1300 ℃ | 
|---|---|---|---|
| 1.2×10-5 | 3.1×10-5 | 6.0×10-5 | 
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