Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS2/WSe2 van der Waals Heterostructures

doi:10.15541/jim20190386

Abstract

Abstract:

To explore the interface engineering on the carrier recombination in two-dimensional (2D) van der Waals (vdW) heterostructures, we developed a theoretical model to address the size-dependent interlayer and Auger recombination rates in MoS₂/WSe₂ in terms of interface bond relaxation method and Fermi's golden rule. It is found that the Auger recombination lifetime in MoS₂/WSe₂ increases with increasing thickness due to the weakening of Coulomb interaction between holes and electrons, as well as the Auger recombination rate is much smaller than that of MoS₂ and WSe₂ units. However, when the thin h-BN layer is introduced into the MoS₂/WSe₂, the interlayer and Auger recombination rates show opposite trends as the h-BN thickness increases. When the thickness of h-BN reaches 9.1 nm under the condition of 1L MoS₂/h-BN/1L WSe₂, the Auger recombination rate approaches 5.3 ns ^-1. These results indicate that the relevant recombination processes can be tuned by interface and dimension. Therefore, our results provide a useful guidance for the optimal design of 2D transition metal dichalcogenides-based optoelectronic nanodevices.

Key words: MoS₂, WSe₂, heterostructure, intercalated insulator, interlayer recombination, Auger recombination

CLC Number:

OQ484

TAN Shilin,YIN Shunda,OUYANG Gang. Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS₂/WSe₂ van der Waals Heterostructures[J]. Journal of Inorganic Materials, 2020, 35(6): 682-688.

Figures/Tables 4

Fig. 1 Schematic diagrams of two kinds of van der Waals heterostructures

Fig. 2 Thickness-dependent bandgaps of MoS2, WSe2 and h-BN

Fig. 3 Thickness-dependent AR lifetime of negative trion (${{\tau }_{{{\text{A}}^{-}}}}$) and biexciton (${{\tau }_{{{\text{A}}^{xx}}}}$) of different system (a) Single component system MoS2 and WSe2; (b) MoS2/WSe2 heterostructures Inset shows the ${{\tau }_{\text{A}}}$under the condition of D<2.0 nm

Fig. 4 Thickness-dependent interlayer recombination (R) and biexciton AR rate ($\tau _{{{\text{A}}^{xx}}}^{-1}$) of heterostructures (a) Monolayer MoS2/h-BN/Monolayer WSe2; (b) MoS2/h-BN/WSe2; (c) Monolayer MoS2/h-BN/WSe2; (d) MoS2/h-BN/Monolayer WSe2

References 47

[1]	LI M Y, CHEN C H, SHI Y , et al. Heterostructures based on two-dimensional layered materials and their potential applications. Mater. Today, 2016,19(6):322-335.
[2]	MAK K F, LEE C, HONE J , et al. Atomically thin MoS₂: a new direct-gap semiconductor. Phys. Rev. Lett., 2010,105(13):136805.
[3]	XIAO M, SUN R Z, LI Y F , et al. Transfer printing of VO₂ thin films using MoS₂/SiO₂ van der Waals heterojunctions. J. Inorg. Mater., 2019,34(11):1161-1166.
[4]	ZHAO Y, YU W, OUYANG G . Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures. J. Phys. D: Appl. Phys., 2017,51(1):015111.
[5]	CAO G, SHANG A, ZHANG C , et al. Optoelectronic investigation of monolayer MoS₂/WSe₂ vertical heterojunction photoconversion devices. Nano Energy, 2016,30:260-266.
[6]	FURCHI M M, ZECHMEISTER A A, HOELLER F , et al. Photovoltaics in van der Waals heterostructures. IEEE J. Sel. Top. Quantum Electron., 2016,23(1):106-116. DOI URL
[7]	CHEN Q, LI Q, YANG Y , et al. Effects of AlGaN interlayer on scattering mechanisms in InAlN/AlGaN/GaN heterostructures. Acta Phys. Sin., 2019,68(1):017301.
[8]	FANG H, BATTAGLIA C, CARRARO C , et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci., 2014,111(17):6198-6202.
[9]	LATINI S, WINTHER K T, OLSEN T , et al. Interlayer excitons and band alignment in MoS₂/h-BN/WSe₂ van der Waals heterostructures. Nano Lett., 2017,17(2):938-945.
[10]	KIM J Y, KIM S G, YOUN J W , et al. Energy and charge transfer effects in two-dimensional van der Waals hybrid nanostructures on periodic gold nanopost array. Appl. Phys. Lett., 2018,112(19):193101.
[11]	YANG L, YU X, XU M , et al. Interface engineering for efficient and stable chemical-doping-free graphene-on-silicon solar cells by introducing a graphene oxide interlayer. J. Mater. Chem. A, 2014,2(40):16877-16883.
[12]	MENG J H, LIU X, ZHANG X W , et al. Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer. Nano Energy, 2016,28:44-50.
[13]	SUN W F, LI M C, ZHAO L C . First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices. Acta Phys. Sin., 2010,59(8):5661-5666.
[14]	HE Y, OUYANG G . Geometry-dependent Auger recombination process in semiconductor nanostructures. J. Phys. Chem. C, 2017,121(42):23811-23816.
[15]	贺言 . 半导体纳米结构的表/界面以及光电性质的调控研究. 长沙: 湖南师范大学博士学位论文, 2017.
[16]	LI Q, LIAN T . Area- and thickness-dependent biexciton Auger recombination in colloidal CdSe nanoplatelets: breaking the “universal volume scaling law”. Nano Lett., 2017,17(5):3152-3158.
[17]	LIU S D, CHENG M T, ZHOU H J , et al. The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots. Acta Phys. Sin., 2006,55(5):2122-2127.
[18]	DENNIS A M, MANGUM B D, PIRYATINSKI A , et al. Suppressed blinking and Auger recombination in near-infrared type-II InP/CdS nanocrystal quantum dots. Nano Lett., 2012,12(11):5545-5551.
[19]	PARK Y S, BAE W K, PADILHA L A , et al. Effect of the core/shell interface on Auger recombination evaluated by single-quantum-dot spectroscopy. Nano Lett., 2014,14(2):396-402.
[20]	JAIN A, VOZNYY O, HOOGLAND S , et al. Atomistic design of CdSe/CdS core-shell quantum dots with suppressed Auger recombination. Nano Lett., 2016,16(10):6491-6496. DOI URL
[21]	VAXENBURG R, RODINA A, LIFSHITZ E , et al. Biexciton Auger recombination in CdSe/CdS core/shell semiconductor nanocrystals. Nano Lett., 2016,16(4):2503-2511.
[22]	PELTON M, ANDREWS J J, FEDIN I , et al. Nonmonotonic dependence of Auger recombination rate on shell thickness for CdSe/CdS core/shell nanoplatelets. Nano Lett., 2017,17(11):6900-6906. DOI URL
[23]	BEATTIE A R, LANDSBERG P T . Auger effect in semiconductors. Proc. R. Soc. London. Ser. A, 1959,249(1256):16-29.
[24]	LU N, GUO H, WANG L , et al. Van der Waals trilayers and superlattices: modification of electronic structures of MoS₂ by intercalation. Nanoscale, 2014,6(9):4566-4571. DOI URL
[25]	SUN C Q . Size dependence of nanostructures: impact of bond order deficiency. Prog. Solid State Chem., 2007,35(1):1-159. DOI URL
[26]	OUYANG G, WANG C X, YANG G W . Surface energy of nanostructural materials with negative curvature and related size effects. Chem. Rev., 2009,109(9):4221-4247. DOI URL
[27]	ZHANG A, ZHU Z, HE Y , et al. Structure stabilities and transitions in polyhedral metal nanocrystals: an atomic-bond-relaxation approach. Appl. Phys. Lett., 2012,100(17):171912.
[28]	ZHU Z, ZHANG A, OUYANG G , et al. Edge effect on band gap shift in Si nanowires with polygonal cross-sections. Appl. Phys. Lett., 2011,98(26):263112.
[29]	CHEPIC D I, EFROS A L, EKIMOV A I , et al. Auger ionization of semiconductor quantum drops in a glass matrix. J. Lumin., 1990,47(3):113-127. DOI URL
[30]	OUYANG G, ZHU W G, SUN C Q , et al. Atomistic origin of lattice strain on stiffness of nanoparticles. Phys. Chem. Chem. Phys., 2010,12(7):1543-1549. DOI URL
[31]	DANOVICH M, ZÓLYOMI V, FAL’KO V I, et al. Auger recombination of dark excitons in WS₂ and WSe₂ monolayers. 2D Materials, 2016,3(3):035011. DOI URL
[32]	JIN C, KIM J, WU K , et al. On optical dipole moment and radiative recombination lifetime of excitons in WSe₂. Adv. Funct. Mater., 2017,27(19):1601741. DOI URL
[33]	HUR J H, PARK J, JEON S . A theoretical modeling of photocurrent generation and decay in layered MoS₂ thin-film transistor photosensors. J. Phys. D: Appl. Phys., 2017,50(6):065105. DOI URL
[34]	GUO N, WEI J, JIA Y , et al. Fabrication of large area hexagonal boron nitride thin films for bendable capacitors. Nano Research, 2013,6(8):602-610. DOI URL
[35]	KIRCHARTZ T, MATTHEIS J, RAU U . Detailed balance theory of excitonic and bulk heterojunction solar cells. Phys. Rev. B, 2008,78(23):235320.
[36]	ZEGRYA G G, ANDREEV A D . Mechanism of suppression of Auger recombination processes in type-II heterostructures. Appl. Phys. Lett., 1995,67(18):2681-2683. DOI URL
[37]	HE Y, QUAN J, OUYANG G . The atomistic origin of interface confinement and enhanced conversion efficiency in Si nanowire solar cells. Phys. Chem. Chem. Phys., 2016,18(10):7001-7006. DOI URL
[38]	ZHANG C, FU L, ZHAO S , et al. Controllable Co-segregation synthesis of wafe-scale hexagonal boron nitride thin films. Adv. Mater., 2014,26(11):1776-1781. DOI URL
[39]	KANG J, TONGAY S, ZHOU J , et al. Band offsets and heterostructures of two-dimensional semiconductors. Appl. Phys. Lett., 2013,102(1):012111. DOI URL
[40]	WANG J, MA F, LIANG W , et al. Optical, photonic and optoelectronic properties of graphene, h-BN and their hybrid materials. Nanophotonics, 2017,6(5):943-976.
[41]	VU Q A, LEE J H, NGUYEN V L , et al. Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity. Nano Lett., 2016,17(1):453-459. DOI URL
[42]	DAS S, PRAKASH A, SALAZAR R , et al. Towards low-power electronics: tunneling phenomena in transition metal dichalcogenides. ACS Nano, 2014,8(2):1681-1689. DOI URL
[43]	CHOI M S, LEE G H, YU Y J , et al. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat. Commun., 2013,4(1):1624.
[44]	YUN W S, HAN S W, HONG S C , et al. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX₂ semiconductors (M=Mo, W; X=S, Se, Te). Phys. Rev. B, 2012,85(3):033305.
[45]	GARCÍA-SANTAMARÍA F, BROVELLI S, VISWANATHA R , et al. Breakdown of volume scaling in Auger recombination in CdSe/CdS heteronanocrystals: the role of the core-shell interface. Nano Lett., 2011,11(2):687-693.
[46]	COHN A W, RINEHART J D, SCHIMPF A M , et al. Size dependence of negative trion Auger recombination in photodoped CdSe nanocrystals. Nano Lett., 2013,14(1):353-358. DOI URL
[47]	HE Y, HU S, HAN T , et al. Suppression of the Auger recombination process in CdSe/CdS core/shell nanocrystals. ACS Omega, 2019,4(5):9198-9203. DOI URL

Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS₂/WSe₂ van der Waals Heterostructures

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