Journal of Inorganic Materials ›› 2019, Vol. 34 ›› Issue (3): 321-327.DOI: 10.15541/jim20180293

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Preparation and Thermoelectric Property of n-type SnS

HUANG Zhi-Cheng1,2, YAO Yao1, PEI Jun1,2, DONG Jin-Feng2, ZHANG Bo-Ping1, LI Jing-Feng2, SHANG Peng-Peng3   

  1. 1. The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
    2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
    3. College of Chemistry and Material Science, Shandong Agricultural University, Taian 271018, China;
  • Received:2018-06-29 Revised:2018-08-03 Published:2019-03-20 Online:2019-02-26
  • About author:HUANG Zhi-Cheng. E-mail:
  • Supported by:
    National Key Research and Development Program of China (2018YFB0703600);National Natural Science Foundation of China (11474176).


SnS composed of low toxicity, low-cost and earth-abundant elements, has extensive attention in the field of thermoelectric research. The n-type SnS1-xClx (x=0, 0.02, 0.03, 0.04, 0.05, 0.06) polycrystalline bulk thermoelectric samples were prepared by mechanical alloying (MA) combined with Spark Plasma Sintering (SPS). Effect of Cl- amounts on the phase structure, microstructure and thermoelectric transport properties were systematically studied. Results show that introduction of Cl- enhances electron concentration which makes intrinsic p-type SnS change to n-type. With the amount of Cl- increasing, the Hall carrier concentration of n-type SnS semiconductor increases from 6.31×1014cm-3 (x=0.03) to 7.27×1015cm-3 (x=0.06) at room temperature. The maximum electrical conductivity of 408 S•m-1 the relatively high Seebeck coefficient of -553 μV•K-1 are obtained at 823 K for x=0.05 sample, which produces the maximum power factor of 1.2 μW·cm-1·K-2. Addition of Cl- can introduce point defects to scatter phonons, which makes the lattice thermal conductivity reduce from 0.67 W·m-1·K-1 (x=0) to 0.5 W·m-1·K-1 (x=0.02). The highest ZT~0.17 is obtained at 823 K for x=0.04 sample, which is 70% higher than that (ZT~0.1) of the pristine SnS.


Key words: SnS, Cl-doped, n-type semiconductor, thermoelectric properties

CLC Number: