Compact Cu2ZnSn(S,Se)4 Thin Films Fabricated by a Simple Sol-Gel Technique

doi:10.3724/SP.J.1077.2014.14065

Abstract

Abstract:

Cu₂ZnSn(S_1-_xSe_x)₄ (CZTSSe) thin films with a compact and crack-free morphology and large-grain are obtained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigesting preparation process of Cu₂ZnSnS₄ (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH₃COO)₂, Zn(CH₃COO)₂, SnCl₂•2H₂O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (E_opt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.

Key words: Sol-Gel, CZTSSe, thin film, selenization

CLC Number:

TQ174

ZHANG Ke-Zhi, TAO Jia-Hua, LIU Jun-Feng, HE Jun, DONG Yu-Chen, SUN Lin, YANG Ping-Xiong, CHU Jun-Hao. Compact Cu₂ZnSn(S,Se)₄ Thin Films Fabricated by a Simple Sol-Gel Technique[J]. Journal of Inorganic Materials, 2014, 29(7): 781-784.

Figures/Tables 5

Table 1 Chemical compositions of CZTSSe thin films

Sample	Added Se content during post-annealing /g	Post-annealing time /min	Cu/(Zn+Sn)	Zn/Sn	(S+Se)/metal	x Se/(S+Se)
CZTSSe0	0	20	0.871	1.16	1.01	0
CZTSSe1	0.10	10	0.868	1.13	1.05	0.46
CZTSSe2	0.10	20	0.873	1.15	1.10	0.75
CZTSSe3	0.10	30	0.862	1.16	1.11	0.88
CZTSSe4	0.20	20	0.869	1.14	1.11	0.91

Fig. 1 XRD patterns of Cu2ZnSn(S1-xSex)4 thin films with different x

Fig. 2 Raman spectra of Cu2ZnSn(S1-xSex)4 thin films with different x

Fig. 3 SEM surface morphologies of CZTS thin films (a)-(e) represent the samples CZTSSe0-CZTSSe4, respectively

Fig. 4 The (αhv)2 plots and optical band gap of Cu2ZnSn (S1-xSex)4 thin films with different x

References 10

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Compact Cu₂ZnSn(S,Se)₄ Thin Films Fabricated by a Simple Sol-Gel Technique

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