Photoluminescence and Characterization of ZnO/Zn2SnO4 Nanocables

doi:10.3724/SP.J.1077.2011.00597

Abstract

Abstract: ZnO and Zn₂SnO₄ are excellent functional semiconducting materials with wide direct band gap, high electron mobility and photocatalytic activity. High-density single-crystalline ZnO/Zn₂SnO₄ nanocables were successfully synthesized by using a simple thermal co-evaporation from a mixture source of ZnO and SnO₂ powders. The products in general contain various geometries of wires, with an average diameter of 50-100 nm. These nanowires are consisted of ZnO core and Zn₂SnO₄ sheath with ultra-length, up to several hundred microns. The images of transmission electron microscope (TEM) show that the ZnO core of the nanocable grows along the direction of <0001>. The interface between ZnO and Zn₂SnO₄ performs lattice coherent. The photoluminescence (PL) spectra recorded from the nanocables at room temperature show only a strong peak corresponding to UV band emission of ZnO at about 380.58 nm, which indicates that the sheath of Zn₂SnO₄ prohibits the oxygen deficiency in the surface of nanocables. ZnO/Zn₂SnO₄nanocables can effectively suppress the recombination of the photogenerated electrons and holes, which is promising as anode for dye-sensitized solar cells.

Key words: ZnO/Zn₂SnO₄, nanocable, synthesis, photoluminescence spectra

CLC Number:

O649

ZHOU Ru-Li, KONG Xiang-Yang. Photoluminescence and Characterization of ZnO/Zn₂SnO₄Nanocables[J]. Journal of Inorganic Materials, 2011, 26(6): 597-601.

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Photoluminescence and Characterization of ZnO/Zn₂SnO₄Nanocables

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