Journal of Inorganic Materials

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Resistance Gas Sensitivity and nansmittance Gas Sensitivity of SnO2 Thin Film by a Novel Sol-Gel Method

LIN Yin-Yin1; TANG Ting-Ao1; HUANG Wei-Ning1; JIANG Guo-Ban1; YAO Xi 2   

  1. 1.Institute of Microelectronics; Department of Electronic Engineering; Fudan University; Shanghai 200433; China; 2. Electronic Materials Research Laboratory; Xi an Jiaotong University; Xi an 710049, China
  • Received:1999-11-19 Revised:2000-01-05 Published:2000-12-20 Online:2000-12-20

Abstract: SnO2 thin film with good resistance-gas sensitivity was prepared by a novel sol-gel method
using inorganic salts as starting materials. The sensitivity of the thin film to 600ppm CO was up to 500 at the optimal working temperature of
200℃, white the respondence time and recovery time were 13s and 20s respectively. The transmittance gas sensitivity was investigated
and it was found that the transmittance of the thin film decreased in CO atmosphere. The best working temperature of the transmittance gas sensitivity
is the same as that of the resistance gas sensitivity. Both resistance gas sensitivity and transimittance gas sensitivity decrease when the annealing
temperature of the thin film increases. The reason of abouve phenomenon was discussed.

Key words: thin film, SnO2, gas sensitive, transmittance, sol-gel method

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