Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (4): 436-440.DOI: 10.3724/SP.J.1077.2013.12298

• Orginal Article • Previous Articles     Next Articles

Preparation of La-doped BiFeO3 Thin Film and Its Photovoltaic Properties

XIE Yi-Jun, GUO Yi-Ping, DONG Wen, GUO Bing, LI Hua, LIU He-Zhou   

  1. (State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China)
  • Received:2012-05-08 Revised:2012-07-18 Published:2013-04-10 Online:2013-03-20
  • About author:XIE Yi-Jun. E-mail: billyxieyi1990@gmail.com

Abstract:

The La3+ doped BiFeO3 (BFO) thin films were fabricated by Sol-Gel method. The precursor solution was synthesized by dissolving Bi(NO3)3, Fe(NO3)3 and La(NO3)3 in 2-methoxyethanol and BiFeO3 thin films were grown by chemical solution deposition on fluorine doped tin oxide (FTO) glass substrate. The influence of La3+ doping on the band gap and photovoltaic properties of BiFeO3 was studied. The BiFeO3 thin films exhibited polycrystalline-phase perovskite structure. The lattice parameter of BiFeO3 decreased with La3+ addition increasing. The band gap of BiFeO3 doped with 10% La3+ doping was 2.71 eV, a little smaller than that of the undoped one. The bandgap of BiFeO3 increased to 2.76 eV with the increase of La3+ doping. The maximal open circuit voltage of 10% La3+-doped BiFeO3 prepared by modified method reached 0.4 V, showing good photovoltaic properties.

Key words: Sol-Gel method, bismuth ferrite, open circuit voltage, lanthanum doping

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