Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches

doi:10.3724/SP.J.1077.2012.11749

Journal of Inorganic Materials ›› 2012, Vol. 27 ›› Issue (10): 1058-1062.DOI: 10.3724/SP.J.1077.2012.11749

• Research Paper • Previous Articles Next Articles

Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches

CHANG Shao-Hui^1,2, LIU Xue-Chao¹, HUANG Wei¹, ZHOU Tian-Yu^1,2, YANG Jian-Hua¹, SHI Er-Wei¹

(1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)

Received:2011-12-04 Revised:2012-02-21 Published:2012-10-20 Online:2012-09-17
About author:CHANG Shao-Hui. E-mail: changshh@student.sic.ac.cn
Supported by:
Funds of the Chinese Academy of Sciences for Key Topics in Innovation Engineering (KJCX2-EW-W10)

Abstract

Abstract: A series of lateral structural photoconductive semiconductor switches (PCSS) were fabricated on V-doped semi-insulating 6H-SiC substrate with the Ni/Au contacts. These PCSS were measured with different bias voltages, excitation energies and excitation wavelengths. The photoelectric absorption effect and photoelectric response of SiC PCSS were investigated. It is found that the absorption coefficient is between 0.601 and 0.692 mm^–1 for semi-insulating 6H-SiC substrate when it is excited by 532 nm laser, and the corresponding pulse signal is much smaller than that excited by 1064 nm laser. Nanosecond-pulse signal is obtained for 6H-SiC PCSS excited by 532 nm laser. The peak current flowing through the switch is increased with increasing the bias voltage and excitation energy, while it is decreased with the increase in substrate thickness.

Key words: photoconductive semiconductor switches, V-doped 6H-SiC, lateral contact structure

CLC Number:

TN36

CHANG Shao-Hui, LIU Xue-Chao, HUANG Wei, ZHOU Tian-Yu, YANG Jian-Hua, SHI Er-Wei. Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches[J]. Journal of Inorganic Materials, 2012, 27(10): 1058-1062.

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Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches

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