Journal of Inorganic Materials

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Phonon Mode and Electron-phonon Coupling Strengths Controlling the Fluorescence Efficiency of Dy3+-doped Selenide Glasses

YING Xiang-Yue, NIE Qiu-Hua, DAI Shi-Xun, XU Tie-Feng, JIN Zhen-Juan   

  1. College of Information Science and Engineering, Ningbo University, Ningbo 315211, China
  • Received:2008-03-10 Revised:2008-05-06 Published:2008-11-20 Online:2008-11-20

Abstract: Pure and Dy3+-doped Ge30Ga5Se65 and 0.9Ge30Ga5Se65+0.1CsBr glasses were prepared by conventional melt-quenching method. The intensity parameters, spontaneous emission probability and branching ratio of Dy3+ ions in Ge30Ga5Se65+CsBr glass were calculated by Judd-Ofelt theory. The lifetime of 6H11/2 level at temperatures from 20K to 300K were measured to investigate the temperature dependence of multiphonon relaxation (MPR) rates. The influence of the local phonon mode and electron-phonon (e-p) coupling strength on the 1.72μm fluorescence efficiency of Dy3+-doped
selenide glasses was investigated. The frequency of the phonon vibration is changed to 268cm-1 due to the formation of Ga-Br bonds with the addition of CsBr to selenide glasses. The values of e-p coupling strengths in Ge30Ga5Se65 and 0.9Ge30Ga5Se65+0.1CsBr glasses are 0.456 and 0.048, respectively. It is clear that the e-p coupling strengths decrease considerably with the addition of CsBr to Ge30Ga5Se65 glass. This reduced e-p coupling together with a large change in the local phonon mode result in the change of the MPR rate.

Key words: melt-quenching method, branching ratios, electron-phonon coupling strengths, selenide glasses

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