Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

doi:10.3724/SP.J.1077.2011.00257

Journal of Inorganic Materials ›› 2011, Vol. 26 ›› Issue (3): 257-260.DOI: 10.3724/SP.J.1077.2011.00257

• Research Paper • Previous Articles Next Articles

Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

LI Man¹, LIU Bao-ting¹,WANG Yu-qiang²,WANG Kuan-mao¹

1. College of Physics Science and Technology, Hebei University,Baoding 071002, China; 2. College of Electronic and Information Engineering,Hebei University, Baoding 071002, China

Received:2010-05-11 Revised:2010-07-08 Published:2011-03-20 Online:2011-02-18
Supported by:
National Nature Science Foundation of China (60876055 ,11074063) ; Nature Science Foundation of Hebei Province (E2008000620,E2009000207) ;Specialized Research Fund for the Doctoral Program of Higher Education (20091301110002) ; The Key Basic Research Program of Hebei Province Applied Basic Research Plan (10963525D)

Abstract

Abstract: The high-k Ni-Al-O gatedielectric films , were depositedon Si (100) and platinized Si (111) substrates by reactive pulsed-laserdeposition (PLD) at 400 ^oC ℃, were and the nannealed in a rapid thermal annealing furnace at various temperatures rangingfrom 600 ℃ ^oC to 750 ℃ ^oC. The structural and electrical properties of the Ni-Al-O films were investigated. It is found that Ni-Al-O thin film annealed up to 750 ℃ ^oC is amorphous and the root-mean-square roughness of the film is less than 0.5 nm, indicating the file surface isvery smooth. The dielectric constant of the film measured at the frequency of 1 MHz is determined to be 9.9 at the frequency of 1 MHz measured with Pt/Ni-Al-O/Pt structure. The capacitance and leakage current density of the film, annealed at above 700 ℃ ^oC are 135 pF and 7.0×10^-⁷A /cm^-2,respectively. The obtained results indicate that the amorphous Ni-Al-O film is a promising candidate for high-k gate dielectric.

Key words: high-k gate dielectric, Ni-Al-O thin film, reactive pulsed laser deposition

CLC Number:

O484

LI Man, LIU Bao-ting,WANG Yu-qiang,WANG Kuan-mao. Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics[J]. Journal of Inorganic Materials, 2011, 26(3): 257-260.

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Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

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