Comparison of Field Emission in Carbon Nanotubes and Gallium-doped Carbon Nanotubes

doi:10.3724/SP.J.1077.2007.00181

Abstract

Abstract: Carbon nanotubes and Ga-doped carbon nanotubes were synthesized by
pyrolysis and then purified. Thin films of the purified samples were fabricated
by a screen-printing method. Field emission properties of these films were
studied. It was shown that the turn-on field of carbon nanotubes and Ga-doped carbon nanotubes was 2.22V/μm and 1.0V/μm, and the current densities were 400μA/cm² and 4000μA/cm² for carbon nanotubes and Ga-doped carbon nanotubes at applied fields 2.4V/μm. The electron field emission properties of the gallium-doped nanotubes were much better than those of carbon nanotubes. Mechanisms of field emission of gallium-doped nanotubes were explained.

Key words: carbon nanotubes, Ga-doped carbon nanotubes, field emission

CLC Number:

TB383
O643

LIU Kun,CHAO Ming-Ju,LI Hua-Yang,LIANG Er-Jun,YUAN Bin. Comparison of Field Emission in Carbon Nanotubes and Gallium-doped Carbon Nanotubes[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2007.00181.

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Comparison of Field Emission in Carbon Nanotubes and Gallium-doped Carbon Nanotubes

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