Abstract: The supported coupled-semiconductor of NiO-V₂O ₅/SiO₂ was prepared by a chemical modification method. BET, TPR, XRD, Raman, TEM, IR and UV-vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-V₂O ₅/SiO ₂. The results show that, V₂O ₅ exists on the surface of silica as crystallite with the partical size about 10nm, Ni ²⁺ --O--V ⁵⁺ bond forms on the surface of NiO-V₂O ₅/SiO₂, and NiO and V₂O ₅ on the surface of support can act on each other. On the one hand, NiO can promote the dispersion of V₂O ₅ on the surface of silica, which effectively prevents V₂O ₅ from aggregation, diminishes the size of crystallite, moreover, NiO can expand the light absorption ability of solid material, advances its utilization to light energy.

Key words: coupled semiconductor, vanadium oxide, nickel oxide, light adsorption ability