Research Progress on Tandem Quantum-dot Light-emitting Diodes

doi:10.15541/jim20250397

Abstract

Abstract:

Tandem quantum-dot light-emitting diodes (TQLEDs), as an important extension of quantum-dot light-emitting diodes (QLEDs) technology, have achieved remarkable improvements in external quantum efficiency, brightness, and operational lifetime through the introduction of multiple emission units and charge generation layers. They have thus become a major research focus in the development of next-generation high-performance display devices. However, despite the substantial progress made in TQLED research, it still faces several critical challenges, such as imbalanced charge injection, poor compatibility with solution-processing techniques, insufficient environmental friendliness of materials, and inadequate stability of devices during long-term operation. This paper first introduces the basic structure and working principles of TQLED, compares its advantages over conventional single-layer QLED, and elaborates on the working principle of the charge generation layer as well as its key role in the collaborative operation of multiple emission units. Subsequently, focusing on inverted, conventional, multiple emission material-based, and other innovative tandem device structures, the paper conducts a systematic analysis of the research progress in improving device performance through different material systems, processing technologies, and structural designs. It also summarizes the breakthroughs achieved by TQLED in terms of efficiency, brightness, and stability. Finally, it identifies current challenges in TQLED and proposes potential future development pathways alongside research priorities from perspectives such as material innovation, structural optimization, and process refinement. Special emphasis is placed on the importance of developing environmentally friendly quantum dot materials, innovating solution-processing techniques, and constructing stable interface structures. These analyses aim to provide theoretical guidance and technical references for the subsequent technological development of TQLED, accelerating their transition from laboratory research to industrial application.

Key words: tandem, quantum dot, light-emitting diode, charge generation layer, review

CLC Number:

ZHONG Hong, ZHANG Yuhao, SHAN Qingsong, HU Tianjun, ZENG Haibo. Research Progress on Tandem Quantum-dot Light-emitting Diodes[J]. Journal of Inorganic Materials, 2026, 41(8): 1036-1048.

Figures/Tables 8

Fig. 1 Comparison of working principles and parameters between conventional single-layer QLED and two-layer TQLED (a) Single emissive layer device; (b) Tandem device with two emissive layers; (c) Comparison of core parameters between two types of light-emitting devices. HTL: hole transport layer; ETL: electron transport layer

Fig. 2 Schematic diagram of CGL working principle

Table 1 Common materials for charge generation layer

Processing method	Material	Type
Vacuum deposition	FeCl₃:NPB	P type
	Li:Alq	N type
	HATCN, MoO₃	Electron acceptor
	IZO, Ag, Al	Ultra thin conductive layer
Solution method	PEDOT:PSS	P type
Solution method	ZnO, ZnMgO	N type

Fig. 3 Structure and optimization effects of inverted tandem devices[54,58 -59,66,68] (a) Schematic diagram of energy level arrangement of inverted TQLED device[58]; (b) Wetting angle change before and after IPA addition[66]; (c) Photoluminescence (PL) decay curves of red quantum dots on different functional layer thin films[68]; (d) Energy level structure and electric field induced charge generation of semiconductor-metal-dielectric material CGL[54]; (e) Charge generation efficiency of CGL with and without microstructure[59]; (f) Electroluminescence photos of green and red tandem anti-counterfeiting devices under 8 V (left) and 13 V (right) driving voltages[59]

Fig. 4 Structure and optimization effects of conventional tandem devices[43,48,52,72] (a) Conventional TQLED energy level structure[48]; (b) PL spectra of green quantum dots covered with ZnMgO/Al/HATCN/MoO3 before and after chlorobenzene rinsing[48]; (c) White TQLED working diagram[52]; (d) Color gamut diagram[72]; (e) Comparison of lifetime between tandem and single-layer devices[43]

Fig. 5 Structure and optimization effects of multi luminescent materials tandem devices[57,75 -76] (a) Device structure, (b) electroluminescence (EL) spectra and (c) color gamut of cadmium-based/organic tandem device[57]; (d) Device structure, (e) simulated electric field before and after inserting MoO3 and (f) working lifetime and surface temperature comparison of perovskite/organic tandem device[75]; (g) Tandem device structure with optical microcavity and (h) EL spectra of organic, perovskite, and tandem devices[76]

Fig. 6 Structure and optimization effects of other innovative tandem devices[78,80 -81] (a) Device structure and (b) AC signal controlled output color of the AC-driven TQLED[78]; (c) Device structure and (d) full-color pixel working diagram of the light output control device[80]; (e) Flexible TQLED assembly processes and working diagram[81]

Table 2 Structure and performance of TQLED devices in recent years

Color	CGL	Effect	EQE/%	Lifetime/h	Ref.
Red	TCTA/MoO₃/IZO/ZnMgO	1. Energy level matching 2. Potential barrier reduction	49.01	>50000 (T₉₅^*@1000 cd/m²)	[83]
Green	PMA/Al:AlO_x	1. Achieved charge injection balance 2. Suppressed current leakage 3. Prevention of solvent damage to the lower layer	50.3	19000 (T₅₀@100 mA/cm²)	[54]
Blue	PMA/Al:AlO_x		24	-	[54]
White	PEDOT:PSS/ZnO/PEIE	1. Improved charge injection balance 2. Inhibition of quenching	28	-	[68]
Red	ZnMgO/PEDOT:PSS	1. Improved CGL acid resistance 2. Inhibition of quenching	35	12000 (T₅₀@1000 cd/m²)	[43]
Red	ZnMgO/Al/HATCN/MoO₃	-	34.4	-	[84]
Green	ZnMgO/Al/HATCN/MoO₃	1. Reduced solvent damage 2. Implementing a matching energy level arrangement 3. Improved balance of carrier injection	27.6	53808 (T₅₀@100 cd/m²)	[48]
Blue	ZnMgO/Al/HATCN/MoO₃		21.4	107 (T₅₀@100 cd/m²)	[48]
White	ZnO/PMA	1. Reduced solvent damage 2. Improved charge injection and transfer capability 3. High transmittance to reduce parasitic light absorption	27.3	-	[72]
Green	Bphen:Cs₂CO₃/Al/HATCN/ MoO₃/CBP	-	40	42080 (T₅₀@100 cd/m²)	[75]
White	Bphen:Yb/HATCN/TAPC	-	23.9	-	[74]
Red	-	1. Prevention of solvent damage to the lower layer 2. High-efficiency interconnection	60.7	≈30000 (T₉₅@1000 cd/m²)	[85]
Red	ITO	1. Improved balance of carrier injection 2. Optimized optical external coupling	51.2	≈31383 (T₉₅@1000 cd/m²)	[86]
Red	ZnMgO/PMA/AMA	1. Improved balance of carrier injection 2. Improved CGL acid resistance 3. Improved morphology of thin films	-	-	[87]

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