Near-infrared Afterglow Enhancement and Trap Distribution Analysis of Silicon-chromium Co-doped Persistent Luminescence Materials Zn1+xGa2-2xSixO4:Cr3+

doi:10.15541/jim20180586

Abstract

Abstract:

Co-doping of silicon in zinc gallate spinel persistent luminescent phosphor was adopted to enhance the afterglow properties. Firstly, a series of silicon-chromium co-doping zinc gallate spinel samples were prepared by high temperature solid state reaction method. Phosphor with chemical formula of Zn₁₊_xGa_2-2_xSi_xO₄:Cr ³⁺ (x = 0, 0.1, 0.15, 0.2, 0.5, 1) was obtained with the raw materials of ZnO, Ga₂O₃, SiO₂, and Cr₂O₃. The experimental results show that the introduction of suitable concentration of silicon improves the afterglow performance effectively. The strongest afterglow intensity was obtained for sample with x = 0.2, which is 3 times higher than ZnGa₂O₄:Cr ³⁺, and the afterglow duration is up to 24 h. Through further trap distribution analysis, it is shown that the introduction of silicon in the ZnGa₂O₄ host can regulate the distribution of trap depths. Particularly, besides the antisite defects, the co-doping of silicon can induce the formation of aliovalent substitution defects and interstitial defects, as well as tune the band gap value, thereby achieving the purpose of improving the afterglow performance.

Key words: Zn₁₊_xGa_2-2_xSi_xO₄:Cr³⁺, persistent luminescence, non-equivalent doping, trap distribution

CLC Number:

TQ174

WANG Kai, YAN Li-Ping, SHAO Kang, ZHANG Cong, PAN Zai-Fa. Near-infrared Afterglow Enhancement and Trap Distribution Analysis of Silicon-chromium Co-doped Persistent Luminescence Materials Zn₁₊_xGa_2-2_xSi_xO₄:Cr³⁺[J]. Journal of Inorganic Materials, 2019, 34(9): 983-990.

Figures/Tables 11

Table 1 Chemical composition of silicon-chromium co-doped persistent luminescent material

Sample	x	Chemical components
ZGO1	0	ZnGa₂O₄: Cr³⁺
ZGSiO2	0.1	Zn_1.1Ga_1.8Si_0.1O₄: Cr³⁺
ZGSiO3	0.15	Zn_1.15Ga_1.7Si_0.15O₄:Cr³⁺
ZGSiO4	0.2	Zn_1.2Ga_1.6Si_0.2O₄: Cr³⁺
ZGSiO5	0.5	Zn_1.5GaSi_0.5O₄: Cr³⁺
ZSiO6	1	Zn₂SiO₄: Cr³⁺

Fig. 1 XRD patterns of ZGSiO series samples and standard diffraction peak of ZnGa2O4 and Zn2SiO4

Fig. 2 HRTEM image (a) and electron diffraction pattern (b) of ZGSiO4

Fig. 3 Diffuse reflection absorption spectra (a) and ${{(h\nu \times F({{R}_{\infty }}))}^{2}}-h\nu $ diagram (b) of ZGSiO series samples (band gap energy is estimated by intercept of the tangential)

Fig. 4 Excitation (a) and emission (b) spectra of ZGSiO series samples

Fig. 5 Afterglow emission spectra (a) and decay curves (b) of ZGSiO series samples

Fig. 6 Five cycles afterglow decay curves of ZGSiO4 illuminated at 272 (a) and 620 nm (b)

Fig. 7 TL curves (a) and peak intensities (b) of ZGO1-ZGSiO5

Table 2 Trap depths of TL peaks of ZGSiO series samples

Trap Type	Type Ⅰ			Type Ⅱ
Trap Type	Temperature/K	Depth/eV		Temperature/K	Depth/eV
ZGO1	357	0.71	420		0.84
ZGSiO2	353	0.71	414		0.83
ZGSiO3	356	0.71	415		0.83
ZGSiO4	355	0.71	417		0.83
ZGSiO5	354	0.71	411		0.82

Fig. 8 TL curves (a) (heating rate, 20 K/min) and initial rise analysis of TL curves (b) of ZGSiO4 sample after treatment at different emptying temperatures

Fig. 9 TL curves (a) and trap density-time distribution (b) of ZGSiO4 sample at different delay time after 10 min excitation of xenon lamp

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Near-infrared Afterglow Enhancement and Trap Distribution Analysis of Silicon-chromium Co-doped Persistent Luminescence Materials Zn₁₊_xGa_2-2_xSi_xO₄:Cr³⁺

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