Deposition of Amorphous Zinc Oxide Thin Film at Room Temperature and Its Resistive Switching Characteristics

doi:10.15541/jim20140037

Abstract

Abstract:

Amorphous zinc oxide thin film was prepared through Sol-Gel method using deep-ultraviolet photochemical activation instead of high temperature annealing. The XRD patterns showed that the zinc oxide film was amorphous. XPS analysis showed that the film was mainly composed of ZnO. The Al top electrodes were deposited on irradiated thin film by DC magnetron sputtering to get Al/a-ZnO/FTO structured device. The influence of deep-ultraviolet irradiation time on switching properties was investigated to understand the mechanism of deep-ultraviolet irradiation. The results illustrate that the device after sufficient irradiation (12 h) has bipolar resistive switching property. The distribution of threshold voltage is very concentrated (-3.7 V<V_set<-2.9 V, 3.4 V<V_reset<4.3 V) which meets the need of low voltage operation of the memories. Both HRS and LRS have not obviously attenuated for at least 4000 s. The resistive switching behavior of the Al/a-ZnO/FTO device can be explained by the trap-charged space-charge-limited current mechanism.

Key words: deep-ultraviolet irradiation, resistive switching, amorphous zinc oxide thin film

CLC Number:

TN303
TN3894

ZHANG Tao, XU Zhi-Mou, WU Xing-Hui, LIU Bin-Bing. Deposition of Amorphous Zinc Oxide Thin Film at Room Temperature and Its Resistive Switching Characteristics[J]. Journal of Inorganic Materials, 2014, 29(11): 1161-1166.

Figures/Tables 5

Fig. 1 SEM image of cross sectional zinc oxide film on the FTO substrate

Fig. 2 XRD patterns of zinc oxide film irradiated with different time (a), O1s (b) and Zn2p (c) XPS spectra of zinc oxide film and atomic composition ratios of zinc oxide film with different irradiation time (d)

Fig. 3 Light absorption characteristic of the Zn(NO3)2 in 2-ME sol

Fig. 4 I-V curves of Al/a-ZnO/FTO under different DUV time

Fig. 5 Resistance property of Al/a-ZnO/FTO (a) I-V curves; (b) I-V curves of the Al/a-ZnO/FTO device under negative bias voltage direction in the double logarithmic coordinates(the number within the plot indicates the slope of I-V curve); (c) Distribution of threshold voltage of Al/a-ZnO/FTO device; (d) Retention properties of resistance state at room temperature; (e) Switching endurance characteristic under continued sweep cycles

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