Influence of Thickness on Performances of YBa2Cu3O7-δ Films Prepared by Metal Organic Solution Deposition

doi:10.15541/jim20140088

Abstract

Abstract:

Trifluoroacetate metal organic deposition (TFA-MOD) is one of the most promising technology routes for fabrication of YBa₂Cu₃O_7-_δ (YBCO) coated conductors. In this paper, high-boiling point organic solvent diethanolamine (DEA) was added to modulate and to improve the properties of precursor solution by suppression the defect in the final films. And the thickness of single coated film was increased by increased concentration of the metal ions in the precursor solution. It is revealed that an exponential relationship was found between the thickness of precursor film after low-temperature decomposition and the ion concentration, as well as the viscosity of precursor solution vs the ion concentration. Optimizing the ion concentration and dip-coating parameters, smooth and crack-free YBCO films after crystallization are achieved with the thickness more than 1.3 μm. The films show homogeneous microstructures while dispersive heterogeneous particles appear in the surface of the thick films. Critical current density (J_c) measurement shows a decrease of J_c due to the increase of the thickness of YBCO films prepared by high concentration precursor solution, while critical currents (I_c) are distinctly improved. For instance, the I_c value of YBCO film prepared by 2.5 mol/L precursor solution is 4.7 times of that by 1.0 mol/L precursor solution.

Key words: TFA-MOD, YBCO thick films, rapid preparation, DEA, concentration of precursor solution

CLC Number:

TQ174

RUI Run-Sheng, LIU Zhi-Yong, BAI Chuang-Yi, GUO Yan-Quen, JIN Xiao-Yan, CAI Chuan-Bing. Influence of Thickness on Performances of YBa₂Cu₃O_7-_δ Films Prepared by Metal Organic Solution Deposition[J]. Journal of Inorganic Materials, 2014, 29(11): 1167-1172.

Figures/Tables 8

Fig. 1 Surface morphologies of precursor films prepared on Si slice at heating rate of 20℃/min Concentration of the precursor solution is (a) 1.0 mol/L, (b) 1.5 mol/L, (c) 2.0 mol/L and (d) 2.5 mol/L

Fig. 2 Surface morphologies of precursor films prepared on Si slice at heating rate of 5 ℃/min Concentration of the precursor solution is (a) 1.0 mol/L, (b) 1.5 mol/L, (c) 2.0 mol/L and (d) 2.5 mol/L

Fig. 3 Surface morphologies of different thickness of YBCO samples prepared on single LAO at heating rate of 20 ℃/min Concentration of the precursor solution is (a) 1.0 mol/L, (b) 1.5 mol/L, (c) 2.0 mol/L and (d) 2.5 mol/L

Fig. 4 Concentration of the precursor solution dependences of thickness of precursor films prepared on single LAO or Si slice with viscosity of the precursor solution(a) and cross section image of precursor film prepared with the precursor solution’s concentration of 2.5 mol/L(b) Hollow circular: concentration of the precursor solution vs. thickness of precursor film on Si slice ( Half- hollow circular shown the phenomenon that films crack). Solid circular: concentration of the precursor solution vs. thickness of precursor film on single LAO. Hollow square: the viscosity vs concentration of the precursor solution

Fig. 5 Concentration of the precursor solution dependences of thickness of YBCO samples

Fig. 6 θ-2θ scanning pattern of YBCO samples with different thicknesses (A) and enlarged θ-2θ scanning pattern (B) of YBCO samples Concentration of the precursor solution is (a) 1.0 mol/L, (b) 1.5 mol/L, (c) 2.0 mol/L, (d) 2.5 mol/L, respectively

Fig. 7 Peak intensity ratio of (003) and (006) dependences of the critical current density Jc

Fig. 8 Thickness dependences of Jc and Ic(n)/Ic(n=1.0mol/L) (a) and induced voltage vs. Jc (b) of YBCO samples

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Influence of Thickness on Performances of YBa₂Cu₃O_7-_δ Films Prepared by Metal Organic Solution Deposition

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