Effect of Sb Doping on Thermoelectric Property of N-type Half-Heusler Compounds

doi:10.15541/jim20130659

Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (9): 931-935.DOI: 10.15541/jim20130659

• Orginal Article • Previous Articles Next Articles

Effect of Sb Doping on Thermoelectric Property of N-type Half-Heusler Compounds

FAN Yi^1,2, LI Xiao-Ya², JIANG Yong-Fen¹, BAO Ye-Feng¹

(1. Mechanical and Electrical Engineering Institute, Changzhou Campus Hohai University, Changzhou 213022, China; 2. CAS Key Laboratory for Energy Conversion Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)

Received:2013-12-12 Revised:2014-02-07 Published:2014-09-17 Online:2014-08-21
About author:FAN Yi. E-mail: wdfan_123@126.com
Supported by:
National Natural Science Foundation of China (51372261);National Basic Research program of China (2013CB632504)

Abstract

Abstract:

The effect of Sb doping on thermoelectric transport properties of N-type half-Heusler compounds Zr_0.25Hf_0.25Ti_0.5NiSn_1-_xSb_x (x=0, 0.002, 0.005, 0.01, 0.02, 0.03) was studied. Results show that with increasing Sb doping amount, the carrier concentration of the samples increases while the electrical resistivity decreases, especially sharply at low temperature range (~300 K). The Seebeck coefficient decreases, and the temperatures at which the Seebeck coefficient reaches climax move to higher ones. Therefore, the power factor increases by ~20%. The total thermal conductivity increases mainly due to the enhancement of electrical thermal conductivity, the lattice thermal conductivity remains almost unchanged. For the samples with x<0.01, the maximum ZT value is about 0.77 at 800 K, and among the samples, the one with x=0.005 performs the best in the whole temperature range.

Key words: N-type half-Heusler, Sb doping, thermoelectric transport property

CLC Number:

O482
TN37

FAN Yi, LI Xiao-Ya, JIANG Yong-Fen, BAO Ye-Feng. Effect of Sb Doping on Thermoelectric Property of N-type Half-Heusler Compounds[J]. Journal of Inorganic Materials, 2014, 29(9): 931-935.

Figures/Tables 8

Table 1 The optimal Sb doping amount in different N-type Half-Heusler systems

Systems	Optimal Sb doping amount	Reference
Zr_0.5Hf_0.5NiSn_1-_xSb_x	0.005-0.010	[1]
TiNiSn_1-_xSb_x	0.01-0.05	[6]
Zr_0.25Hf_0.25Ti_0.5NiSn_1-_xSb_x	0.002	[7]
Zr_0.25Hf_0.25Ti_0.5NiSn_1-_xSb_x	0.002	[8]
Hf_0.75Zr_0.25NiSn_1-_xSb_x	0.025	[9]
Hf_0.6Zr_0.4NiSn_1-_xSb_x	0.020	[10]
Hf_0.75Zr_0.25NiSn_1-_xSb_x	0.010	[11]

Fig. 1 XRD patterns of the SPSed samples of Zr0.25Hf0.25Ti0.5 NiSn1-x Sbx (x=0-0.03)

Fig. 2 Temperature dependence of carrier concentration for the Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0-0.03) samples

Fig. 3 Temperature dependence of electrical resistivity for the Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0-0.03) samples

Fig. 4 Temperature dependence of Seebeck coefficients for the Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0-0.03) samples

Fig. 5 Temperature dependence of power factor for the Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0-0.03) samples

Fig. 6 Temperature dependence of thermal conductivity for the Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0~0.03) samples (a) Total thermal conductivity; (b) Lattice and electronic contribution to the total thermal conductivity

Fig. 7 Temperature dependence of figure of merit, ZT value for the Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0~0.03) samples

References 15

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Effect of Sb Doping on Thermoelectric Property of N-type Half-Heusler Compounds

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