无机材料学报 ›› 2025, Vol. 40 ›› Issue (7): 817-825.DOI: 10.15541/jim20250060
魏志帆(), 陈国清(
), 祖宇飞, 刘渊, 李明浩, 付雪松, 周文龙
收稿日期:
2025-02-17
修回日期:
2025-03-20
出版日期:
2025-07-20
网络出版日期:
2025-03-25
通讯作者:
陈国清, 教授. E-mail: gqchen@dlut.edu.cn作者简介:
魏志帆(1993-), 男, 博士. E-mail: 424380067@qq.com
基金资助:
WEI Zhifan(), CHEN Guoqing(
), ZU Yufei, LIU Yuan, LI Minghao, FU Xuesong, ZHOU Wenlong
Received:
2025-02-17
Revised:
2025-03-20
Published:
2025-07-20
Online:
2025-03-25
Contact:
CHEN Guoqing, professor. E-mail: gqchen@dlut.edu.cnAbout author:
WEI Zhifan (1993-), male, PhD. E-mail: 424380067@qq.com
Supported by:
摘要:
近年来, ZrB2作为超高温陶瓷(UHTCs)的代表性材料, 已成为新一代空天飞行器热端部件重要的候选材料体系。然而, 其实际应用受限于材料制备以及复杂构件的加工难题。为此本研究通过引入HfSi2作为烧结助剂, 优化ZrB2基UHTCs的烧结工艺, 重点解决传统ZrB2基陶瓷因较低的扩散系数而导致致密化困难的难题。研究聚焦于核-周结构硼化物的形成机制以及其对ZrB2-HfSi2陶瓷致密化的辅助作用。采用1600 ℃热压烧结制备了ZrB2-HfSi2陶瓷, 结果表明, 在烧结过程中, HfSi2相软化能够有效填充颗粒间隙, 从而实现ZrB2-HfSi2陶瓷的低温烧结。同时, 在保温阶段, Hf与Zr原子通过溶解-再沉淀机制形成具有核-周结构的ZrB2/(Zr,Hf)B2, 促进了烧结粉体之间的物质交换, 从而加速了ZrB2-HfSi2陶瓷的致密化。此外, 该结构主要由核心ZrB2及其周边(Zr,Hf)B2组成, 具有完全共格界面(P6/mmm六方结构), 晶格失配度低(<5%), 界面稳定。ZrB2-HfSi2陶瓷的抗压强度、显微硬度以及断裂韧性分别为(1333±83) MPa、(15.86±0.72) GPa以及(2.01±0.36) MPa·m1/2。该陶瓷主要表现为典型的沿晶断裂形式, 只有少数解理面上出现核-周结构特征。本研究为实现UHTCs低温烧结提供了重要的参考价值。
中图分类号:
魏志帆, 陈国清, 祖宇飞, 刘渊, 李明浩, 付雪松, 周文龙. ZrB2-HfSi2复相陶瓷显微组织及其核-周结构形成机制[J]. 无机材料学报, 2025, 40(7): 817-825.
WEI Zhifan, CHEN Guoqing, ZU Yufei, LIU Yuan, LI Minghao, FU Xuesong, ZHOU Wenlong. ZrB2-HfSi2 Ceramics: Microstructure and Formation Mechanism of Core-rim Structure[J]. Journal of Inorganic Materials, 2025, 40(7): 817-825.
图1 (a) ZrB2-HfSi2陶瓷致密化曲线; (b)其他ZrB2基陶瓷的烧结温度及相对密度[27-34]
Fig. 1 (a) Densification curve of ZrB2-HfSi2 ceramic; (b) Sintering temperature and relative density of other ZrB2 based ceramics[27-34]
图3 (a, b) ZrB2-HfSi2陶瓷的显微组织(a)及其局部放大图(b); (c) ZrB2-HfSi2陶瓷的EDS结果; (d)反应(6)的吉布斯自由能
Fig. 3 (a) Microstructure and (b) partial enlarged microstructure of ZrB2-HfSi2 ceramic; (c) EDS results of ZrB2-HfSi2 ceramic; (d) Gibbs free energy of the reaction (6)
图4 ZrB2-HfSi2陶瓷核-周结构的EBSD分析图
Fig. 4 EBSD analysis diagrams of ZrB2-HfSi2 ceramic with core-rim structure (a) Core-rim structure microstructure; (b) Phase distribution of core-rim structure; (c) IPF of core-rim structure; (d) Orientation angle difference of interface position
图5 (a) ZrB2-HfSi2陶瓷的STEM照片及其元素分布图; (b)核-周结构界面处的显微组织及SAED图案; (c)图5(b)中界面选取位置的HRTEM照片
Fig. 5 (a) STEM image and element distribution of ZrB2-HfSi2 ceramic; (b) Microstructure at the interface of core-rim structure and SAED patterns; (c) HRTEM images of the selected interface position in Fig. 5(b)
Crystalline plane | Plane spacing measured/ theoretical value | Crystalline plane | Plane spacing measured/ theoretical value | Mismatch ratio measured/theoretical value | Interface |
---|---|---|---|---|---|
(1¯10¯1)ZrB2 | 0.213/0.216 nm | (1¯10¯1)(Zr,Hf)B2 | 0.216/0.215 nm | 1.4%/0.4% | Common lattice interface |
(01¯1¯1)ZrB2 | 0.209/0.216 nm | (01¯1¯1)(Zr,Hf)B2 | 0.213/0.215 nm | 1.9%/0.4% | Common lattice interface |
(01¯11)(Zr,Hf)B2 | 0.214/0.215 nm | (0¯20)(Zr,Hf)Si2 | 0.730/0.734 nm | 228.5%/243.4% | Noncommon lattice interface |
(¯1102)(Zr,Hf)B2 | 0.146/0.148 nm | (1¯1¯1)(Zr,Hf)Si2 | 0.260/0.258 nm | 78.1%/74.3% | Noncommon lattice interface |
表1 晶面间距及失配度的测量值和理论值
Table 1 Measured and theoretical values of the interplanar spacing and misfit ratio
Crystalline plane | Plane spacing measured/ theoretical value | Crystalline plane | Plane spacing measured/ theoretical value | Mismatch ratio measured/theoretical value | Interface |
---|---|---|---|---|---|
(1¯10¯1)ZrB2 | 0.213/0.216 nm | (1¯10¯1)(Zr,Hf)B2 | 0.216/0.215 nm | 1.4%/0.4% | Common lattice interface |
(01¯1¯1)ZrB2 | 0.209/0.216 nm | (01¯1¯1)(Zr,Hf)B2 | 0.213/0.215 nm | 1.9%/0.4% | Common lattice interface |
(01¯11)(Zr,Hf)B2 | 0.214/0.215 nm | (0¯20)(Zr,Hf)Si2 | 0.730/0.734 nm | 228.5%/243.4% | Noncommon lattice interface |
(¯1102)(Zr,Hf)B2 | 0.146/0.148 nm | (1¯1¯1)(Zr,Hf)Si2 | 0.260/0.258 nm | 78.1%/74.3% | Noncommon lattice interface |
图6 (a)(Zr,Hf)Si2/(Zr,Hf)B2界面处的显微组织及SAED图案; (b)图6(a)中界面选取位置的HRTEM照片
Fig. 6 (a) Microstructure at the interface of (Zr,Hf)Si2/ (Zr,Hf)B2 and SAED patterns; (b) HRTEM images of the selected interface position in Fig. 6(a)
图7 ZrB2-HfSi2核-周结构界面形成机理图
Fig. 7 Formation mechanism diagram of core-rim structure interface in ZrB2-HfSi2 During the initial stage, the surface of ZrB2 melts, and Hf partially dissolves in the transient liquid phase to form a core. During the middle stage, Hf solute diffuses through the transient liquid phase to the surface of the unmelted ZrB2 nucleus, and then precipitates to form a high Hf solubility (Zr,Hf)B2 peripheral layer. During the later stage, the remaining Zr-rich transient liquid phase precipitates to form (Zr,Hf)Si2 phase, and finally forms the hierarchical relationship of ZrB2-(Zr,Hf)B2-(Zr,Hf)Si2.
图9 (a) ZrB2、(Zr,Hf)B2和(Zr,Hf)Si2纳米压痕试验的载荷-位移曲线; (b)显微组织中ZrB2、(Zr,Hf)B2和(Zr,Hf)Si2的硬度
Fig. 9 (a) Load-displacement curves of ZrB2, (Zr,Hf)B2 and (Zr,Hf)Si2 in nano indentation experiment; (b) Hardnesses of ZrB2, (Zr,Hf)B2 and (Zr,Hf)Si2 in the microstructures
图10 (a) ZrB2-HfSi2陶瓷的断口组织形貌; (b)核-周结构的解理平台; (c)放大的断口组织及其(d) EDS元素分布
Fig. 10 (a) Fracture microstructure of ZrB2-HfSi2 ceramics; (b) Cleavage platform of core-rim structure; (c) Enlarged drawing of fracture and (d) corresponding EDS element distributions
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