氧化铟薄膜制备及其特性研究

doi:10.3724/SP.J.1077.2010.00141

摘要/Abstract

摘要： 采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜, 通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应, 研究了氧化铟薄膜的结构和光、电特性. 实验发现, 氧化铟薄膜表面粗糙度随着生长温度的升高而增大. X射线衍射结果表明薄膜为立方结构的多晶体, 并且随着生长温度的升高, 可以看到氧化铟薄膜的晶粒变大以及半高宽减小, 这也说明结晶质量的改善. 在可见光范围的透射率超过90%. 同时, 在氩气氛围下制备的薄膜迁移率最大, 其电阻率、霍尔迁移率和电子浓度分别达到了0.31Ω·cm、9.69cm²/(V·s)和1

×10¹⁸cm^-3. 退火处理可以改善氩氧氛围下制备的薄膜的电学性能.

关键词: 氧化铟, 射频磁控溅射, 表面形貌, X射线衍射, 电学特性

Abstract: In₂O₃ thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering. The structural, electrical and optical characteristics of In₂O₃ films were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements. It is found that the surface roughness of In₂O₃ thin film increases with growth temperature increasing. The X-ray diffraction (XRD) studies show that the films are polycrystalline and retain a cubic structure. As the growth temperature rises, the grain size of In₂O₃ thin film increases and the FWHM decreases, namely, the crystalline quality of the films is improved. The optical transmittance of the thin films exceeds 90%. The film grown in Ar atmosphere shows highest mobility with resistivity of 0.31Ω·cm, mobility of 9.69cm²/(V·s), and electron concentration of about 1×10¹⁸cm^-3. And the annealing can improve the electrical properties of the film grown in the Ar+O₂ atmosphere.

Key words: In₂O₃, RF magnetron sputtering, surface morphology, XRD, electrical properties

中图分类号:

TQ174

原子健,朱夏明,王雄,张莹莹,万正芬,邱东江,吴惠桢,杜滨阳. 氧化铟薄膜制备及其特性研究[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2010.00141.

YUAN Zi-Jian,ZHU Xia-Ming,WANG Xiong,ZHANG Ying-Ying,WAN Zheng-Fen,QIU Dong-Jiang,WU Hui-Zhen,DU Bin-Yang. Preparation and Characteristics of Indium Oxide Thin Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2010.00141.

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