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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

调制掺杂Al0.27Ga0.73As/GaAs多量子阱结构的光致发光

程兴奎; CHINV．W．L．+; OSOTCHANT．+; TANSYEYT．L．+; VAUGHAN M．R．++; GRIFFITHSG．J．++   

  1. 山东大学光电材料与器件研究所; 济南 250100; +Departmentofphysics; MacquarieUniversity NSW2109; Australia; ++CSIRO Divisionof Radiophysics Epping, NSW 2121, Australia
  • 收稿日期:1997-05-05 修回日期:1997-08-04 出版日期:1998-06-20 网络出版日期:1998-06-20

Photoluminescence of Modulation Doping GaAs/Al0.27Ga0.73AsMultiquantum Well Structure

CHENG Xing-Kui; CHINV．W．L．+; OSOTCHANT．+; TANSYEYT．L．+; VAUGHAN M．R．++; GRIFFITHSG．J．++   

  1. Institute of OPtoelectronic Materials and Devices; Shandong University Jinan 250100 China; +Department of physics; Macquarie University; NSW 2109; Ausralia; ++CSIRO Division of Radiophysics Epping, NSW 2121, Australia
  • Received:1997-05-05 Revised:1997-08-04 Published:1998-06-20 Online:1998-06-20

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摘要： 在调制掺杂（Si）Al0.27Ga0.73As／GaAs多量子阱结构的光致发光谱中，观测到一个强发光峰及多个低能弱发光峰．强发光峰是量子阱中基态电子与重空穴复合，即激子复合形成的，其低温发光线形可用Voigt函数拟合.低能弱峰是势垒层Al0.27Ga0.73As中DX中心能级上的电子跃迁到SiAs原子而引起，由此确定DX中心有四个能级，其激活能分别为0．35、037、0．39、0．41eV

关键词: 调制掺杂, AlGaAs／GaAs多量子阱, 光致发光

Abstract: The photolumenescence spectra of modulation doing GaAs/Al0.27Ga0.73As multiquantum well structure were measured. There are a strong luminescence peak
and several low energy weak peaks in the luminescence spectra. The strong one arises from transition of electron at ground state in well to heavy hole and these low energy
weak peaks may be attributed to transition of electron at DX centers in Al0.27Ga0.73As to SiAs atoms. On this view, we can come to the conclusion
that the DX centers in Si-doped AlGaAs appear as four levels and their activation energies are about 0.35eV, 0.37eV, 0.39eV and 0.41eV, respectively.

Key words: modulation doping, GaAs/AlGaAs multiquantum well, phototuminescence

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