无机材料学报

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铜上采用镍过渡层化学气相沉积金刚石薄膜的研究

马志斌1; 邬钦崇1; 汪建华2; 王传新2; 黎向锋3   

  1. 1. 中国科学院等离子体物理研究所, 合肥 230031; 2. 武汉化工学院材料工程系, 武汉 430074; 3. 南京航空航天大学机电工程学院, 南京 210016
  • 收稿日期:1999-09-21 修回日期:2000-01-04 出版日期:2000-10-20 网络出版日期:2000-10-20

Diamond Films Deposited on Copper Substrate with a Nickel Intermediate Layer

MA Zhi-Bin1; WU Qin-Chong1; WANG Jian-Hua2; WANG Chuan-Xin2; LI Xiang-Feng 3   

  1. 1.Institute of plasma physics; Chinese Academy of Sciences; Hefei 230031; China; 2. Department of Material Engineering; Wuhan Chemical Industry College; Wuhan 430074, China; 3. Department of Mechanical Engineering, NUAA Nanjing, Nanjing 210016, China
  • Received:1999-09-21 Revised:2000-01-04 Published:2000-10-20 Online:2000-10-20

摘要: 采用镍过渡层研究了铜基片上金刚石薄膜的化学气相沉积.镍过渡层与铜基底间在高温退火条件下形成的铜镍共晶体明显地增强了金刚石薄膜与铜基片之间的结合力.用扫描电子显微镜和激光Raman谱研究了薄膜的形貌和质量;采用高温氢等离子体退火工艺在基片表面形成的铜镍碳氢共晶体上抑制了无定形碳和石墨的形成,有利于金刚石薄膜的生长.金刚石薄膜的均匀性受到共晶体的均匀性的影响.

关键词: 金刚石薄膜, 化学气相沉积, 过渡层

Abstract: The chemical vapor deposition of diamond films on copper substrate with Ni intermediate layer was studied.
The adhesion of the diamond film on the copper substrate was improved due to the formation of a Cu-Ni eutectic between the copper and the Ni
interlayer. Scanning electron microscopy and Raman spectroscopy were used to investigate the films: The diamond films with (100) oriented diamond
particles were obtained under suitable conditions, which involved scratching carefully the substrate with diamond grits and subsequently
annealing the substrate with high temperature hydrogen plasma. The uniformity of the Cu--Ni--C--H eutectic influenced the uniformity of
the diamond film.

Key words: diamond film, chemical vapor deposition, intermediate layer

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