金刚石表面形成Ti3SiC2的反应机理

doi:10.3724/SP.J.1077.2012.11804

无机材料学报 ›› 2012, Vol. 27 ›› Issue (10): 1099-1104.DOI: 10.3724/SP.J.1077.2012.11804 CSTR: 32189.14.SP.J.1077.2012.11804

金刚石表面形成Ti₃SiC₂的反应机理

穆云超, 梁宝岩, 郭基凤

(中原工学院材料与化工学院, 郑州 450007)

收稿日期:2011-12-28 修回日期:2012-04-08 出版日期:2012-10-20 网络出版日期:2012-09-17
基金资助:
河南省基础与前沿技术研究计划项目(102300410274)

Reaction Mechanism of Ti₃SiC₂ Formed on the Diamond

MU Yun-Chao, LIANG Bao-Yan, GUO Ji-Feng

(Materials & Chemical Engineering School, Zhongyuan University of Technology, Zhengzhou 450007, China)

Received:2011-12-28 Revised:2012-04-08 Published:2012-10-20 Online:2012-09-17
Supported by:
Foundation for Basic and Advanced Technology Research Projects of Henan Province (102300410274)

摘要/Abstract

摘要： 采用Ti、Si、TiC、金刚石磨料为原料, 通过放电等离子烧结(SPS), 制备了Ti₃SiC₂陶瓷结合剂金刚石材料. 研究结果表明, Ti-Si-2TiC试样经SPS加热的过程中位移、位移率和真空度在1200℃时发生明显变化, 表明试样发生了物理化学变化. XRD分析结果表明1200℃时试样发生化学反应生成了Ti₃SiC₂. 随着温度升高, 试样中Ti₃SiC₂含量逐渐增加. 当烧结温度为1200℃、1300℃、1400℃和1500℃时, 产物中Ti3SiC2含量分别为65.9%、79.97%、87.5%和90.1%. 在Ti/Si/2TiC粉料中添加适量的金刚石5%和10%进行烧结, 并未抑制Ti₃SiC₂的反应合成. SEM观察表明, 金刚石与基体结合紧密, 同时其表面生长着发育良好的Ti3SiC2板条状晶粒. 提出了一种金刚石表面形成Ti₃SiC₂的机制, 即金刚石表面的碳原子首先与周围的Ti反应生成TiC, 然后TiC再与Ti-Si相发生化学反应, 生成Ti₃SiC₂.

关键词: Ti₃SiC₂, 金刚石, 反应机理

Abstract: Ti₃SiC₂ bonded diamond materials were fabricated by spark plasma sintering using Ti/Si/TiC/diamond abrasive as the raw materials. The result showed that displace, dispalce rate and vaccum degree of Ti-Si-2TiC sample sintered by SPS were obviously changed. The Ti/Si/TiC powders were obviously sintered and transformed to TiC and Ti₃SiC₂ at 1200℃ during the sintering process. With increasing sintering temperature, Ti₃SiC₂ content in the samples increased. Ti₃SiC₂ content in the samples were 65.9%, 79.97%, 87.5% and 90.1%, respectively. Addition of (5% and 10%) appropriate amounts of diamond did not inhibit the reaction synthesis of Ti₃SiC₂. SEM observation showed that diamond had one close combination with the matris, and Ti₃SiC₂ grains grew on the surface of diamond. One formation mechanism of Ti₃SiC₂ on the surface of diamond was proposed, C on the surface of diamond reacted with Ti and formed TiC firstly, then TiC reacted with Ti-Si phase and formed Ti₃SiC₂.

Key words: Ti₃SiC₂, diamond, reaction mechanism

中图分类号:

TG146

穆云超, 梁宝岩, 郭基凤. 金刚石表面形成Ti₃SiC₂的反应机理[J]. 无机材料学报, 2012, 27(10): 1099-1104.

MU Yun-Chao, LIANG Bao-Yan, GUO Ji-Feng. Reaction Mechanism of Ti₃SiC₂ Formed on the Diamond[J]. Journal of Inorganic Materials, 2012, 27(10): 1099-1104.

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金刚石表面形成Ti₃SiC₂的反应机理

Reaction Mechanism of Ti₃SiC₂ Formed on the Diamond

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